Circuit theory for the comparison of relaxation oscillations in OTS and in DIACS

R. C. Callarotti, P. E. Schmidt, M. Octavio, A. Sa-Neto, P. Esqueda

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We compare our correlations between theoretical circuit models and experimental results for OTS devices and DIACS while they undergo relaxation oscillations. OTS devices are of the type OFF-?-ON while DIACS show well defined OFF and negative resistance (NR) states. The excellent agreement between theory and experiments in DIACS gives additional support to the use of our circuital models in the interpretation of our OTS data. Experimental results for DIACS include dc and pulsed I-V characteristics, low level ac response, as well as relaxation and quasi-sinusoidal oscillations. We discuss the lack of experimentally observed quasi-sinusoidal oscillations in OTS in view of previous interpretation of chalcogenide threshold switches as time varying systems as opposed to OFF-NR-ON devices.

Original languageEnglish (US)
Pages (from-to)1117-1122
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume35-36
Issue numberPART 2
DOIs
StatePublished - Jan 1 1980

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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