Cleaning of Si surfaces by lamp illumination

A. Danel, C. L. Tsai, K. Shanmugasundaram, F. Tardif, E. Kamieniecki, J. Ruzyllo

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

Cleaning of silicon surfaces using lamp illumination in ambient air at atmospheric pressure (ROST process) was investigated. It is demonstrated that an increase of wafer temperature up to 300°C by white light illumination for 30 seconds is sufficient to remove most volatile contaminants from the Si surface. Organic contaminants originating from wafer storage and handling ambient as well as from IPA drying are easily removed by ROST. This process is very effective in suppressing uncontrolled variation of the apparent thickness of ultra-thin oxide resulting from organic contamination. Furthermore, the process is effective in removing pseudo-volatile contamination such as sulfuric acid but not non-volatile contaminants such as salts and metallic ions. In general, the efficiency of lamp cleaning decreases for contamination deposited during long wafer storage times.

Original languageEnglish (US)
Pages (from-to)195-198
Number of pages4
JournalSolid State Phenomena
Volume92
DOIs
StatePublished - 2003
EventThe International Symposium on Ultra Clean Processing of Silicon Surfaces V - Ostend, Belgium
Duration: Sep 16 2002Sep 18 2002

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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