CMOS and interconnect reliability - Advanced gate dielectric reliability

Patrick M. Lenahan, John Suehle

Research output: Contribution to journalEditorial

Original languageEnglish (US)
Article number4154311
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 2006

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Gate dielectrics
CMOS

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

@article{2ffbf079fbfd4a968be7564723625801,
title = "CMOS and interconnect reliability - Advanced gate dielectric reliability",
author = "Lenahan, {Patrick M.} and John Suehle",
year = "2006",
doi = "10.1109/IEDM.2006.346892",
language = "English (US)",
journal = "Technical Digest - International Electron Devices Meeting",
issn = "0163-1918",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Suehle, John

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JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

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