CMOS and interconnect reliability - Advanced gate dielectric reliability

Patrick Lenahan, John Suehle

Research output: Contribution to journalEditorial

Original languageEnglish (US)
Article number4154311
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - Dec 1 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: Dec 10 2006Dec 13 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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