Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch

Ahmedullah Aziz, Nikhil Shukla, Alan Seabaugh, Suman Datta, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Threshold switches (TS) exhibiting electrically driven phase transition between high resistance (insulating) and low resistance (metallic) states have shown an immense promise for several circuit applications [1]. Ag/HfO2/Pt} based TS, a recent inclusion in this group, was reported to have high selectivity (~107) and unipolar conduction [2], [3]. The unipolar nature of such a TS may be capitalized to achieve diode-like rectifying behavior with unique advantages. In this work, we discuss the merits of Ag/HfO2/Pt TS over standard diodes and present a Cockcroft-Walton multiplier (CWM) [4], [5] based on Ag/HfO2/Pt. The proposed CWM generates higher DC voltage from an AC input compared to standard CWM, utilizing (a) high selectivity (b) hysteretic behavior (c) abrupt insulator → metal transitions and (d) unipolar conduction of Ag/HfO2/Pt.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
DOIs
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2018-June
ISSN (Print)1548-3770

Other

Other76th Device Research Conference, DRC 2018
CountryUnited States
CitySanta Barbara
Period6/24/186/27/18

Fingerprint

Switches
Diodes
Metal insulator transition
Phase transitions
Networks (circuits)
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Aziz, A., Shukla, N., Seabaugh, A., Datta, S., & Gupta, S. K. (2018). Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch. In 2018 76th Device Research Conference, DRC 2018 [8442270] (Device Research Conference - Conference Digest, DRC; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442270
Aziz, Ahmedullah ; Shukla, Nikhil ; Seabaugh, Alan ; Datta, Suman ; Gupta, Sumeet Kumar. / Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch. 2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (Device Research Conference - Conference Digest, DRC).
@inproceedings{5dd409eab10d410dba36deb80334d17b,
title = "Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch",
abstract = "Threshold switches (TS) exhibiting electrically driven phase transition between high resistance (insulating) and low resistance (metallic) states have shown an immense promise for several circuit applications [1]. Ag/HfO2/Pt} based TS, a recent inclusion in this group, was reported to have high selectivity (~107) and unipolar conduction [2], [3]. The unipolar nature of such a TS may be capitalized to achieve diode-like rectifying behavior with unique advantages. In this work, we discuss the merits of Ag/HfO2/Pt TS over standard diodes and present a Cockcroft-Walton multiplier (CWM) [4], [5] based on Ag/HfO2/Pt. The proposed CWM generates higher DC voltage from an AC input compared to standard CWM, utilizing (a) high selectivity (b) hysteretic behavior (c) abrupt insulator → metal transitions and (d) unipolar conduction of Ag/HfO2/Pt.",
author = "Ahmedullah Aziz and Nikhil Shukla and Alan Seabaugh and Suman Datta and Gupta, {Sumeet Kumar}",
year = "2018",
month = "8",
day = "20",
doi = "10.1109/DRC.2018.8442270",
language = "English (US)",
isbn = "9781538630280",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 76th Device Research Conference, DRC 2018",
address = "United States",

}

Aziz, A, Shukla, N, Seabaugh, A, Datta, S & Gupta, SK 2018, Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch. in 2018 76th Device Research Conference, DRC 2018., 8442270, Device Research Conference - Conference Digest, DRC, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 6/24/18. https://doi.org/10.1109/DRC.2018.8442270

Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch. / Aziz, Ahmedullah; Shukla, Nikhil; Seabaugh, Alan; Datta, Suman; Gupta, Sumeet Kumar.

2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8442270 (Device Research Conference - Conference Digest, DRC; Vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch

AU - Aziz, Ahmedullah

AU - Shukla, Nikhil

AU - Seabaugh, Alan

AU - Datta, Suman

AU - Gupta, Sumeet Kumar

PY - 2018/8/20

Y1 - 2018/8/20

N2 - Threshold switches (TS) exhibiting electrically driven phase transition between high resistance (insulating) and low resistance (metallic) states have shown an immense promise for several circuit applications [1]. Ag/HfO2/Pt} based TS, a recent inclusion in this group, was reported to have high selectivity (~107) and unipolar conduction [2], [3]. The unipolar nature of such a TS may be capitalized to achieve diode-like rectifying behavior with unique advantages. In this work, we discuss the merits of Ag/HfO2/Pt TS over standard diodes and present a Cockcroft-Walton multiplier (CWM) [4], [5] based on Ag/HfO2/Pt. The proposed CWM generates higher DC voltage from an AC input compared to standard CWM, utilizing (a) high selectivity (b) hysteretic behavior (c) abrupt insulator → metal transitions and (d) unipolar conduction of Ag/HfO2/Pt.

AB - Threshold switches (TS) exhibiting electrically driven phase transition between high resistance (insulating) and low resistance (metallic) states have shown an immense promise for several circuit applications [1]. Ag/HfO2/Pt} based TS, a recent inclusion in this group, was reported to have high selectivity (~107) and unipolar conduction [2], [3]. The unipolar nature of such a TS may be capitalized to achieve diode-like rectifying behavior with unique advantages. In this work, we discuss the merits of Ag/HfO2/Pt TS over standard diodes and present a Cockcroft-Walton multiplier (CWM) [4], [5] based on Ag/HfO2/Pt. The proposed CWM generates higher DC voltage from an AC input compared to standard CWM, utilizing (a) high selectivity (b) hysteretic behavior (c) abrupt insulator → metal transitions and (d) unipolar conduction of Ag/HfO2/Pt.

UR - http://www.scopus.com/inward/record.url?scp=85053218288&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053218288&partnerID=8YFLogxK

U2 - 10.1109/DRC.2018.8442270

DO - 10.1109/DRC.2018.8442270

M3 - Conference contribution

AN - SCOPUS:85053218288

SN - 9781538630280

T3 - Device Research Conference - Conference Digest, DRC

BT - 2018 76th Device Research Conference, DRC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Aziz A, Shukla N, Seabaugh A, Datta S, Gupta SK. Cockcroft-walton multiplier based on unipolar Ag/HfO2/Pt threshold switch. In 2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8442270. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2018.8442270