Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La0.7Sr0.3MnO3/(Ba, Sr)TiO 3/La0.7Sr0.3MnO3 multiferroic tunnel junctions

Y. W. Yin; M. Raju; W. J. Hu; X. J. Weng; X. G. Li; Q. Li

doi:10.1063/1.3564970

Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La_0.7Sr_0.3MnO₃/(Ba, Sr)TiO ₃/La_0.7Sr_0.3MnO₃ multiferroic tunnel junctions

Y. W. Yin, M. Raju, W. J. Hu, X. J. Weng, X. G. Li, Q. Li

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Abstract

Tunnel junctions composed of two ferromagnetic electrodes separated by a ferroelectric barrier were fabricated from epitaxial La_0.7Sr _0.3MnO₃/Ba_0.95Sr_0.05TiO ₃/La_0.7Sr_0.3MnO₃ trilayers. Typical R-H curves with sharp-switched resistance states (magnetic parallel and antiparallel) of magnetic tunnel junctions have been observed up to room temperature. After applying a poling voltage, which reverses the barrier polarization, both the parallel and antiparallel resistance states will switch to different values. Clear tunneling magnetoresistance and tunneling electroresistance, hence the four resistance states have been observed at room temperature.

Original language	English (US)
Article number	07D915
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3564970
State	Published - Apr 1 2011

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Physics and Astronomy(all)

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@article{289cc798bd864fae99394237c8543a76,

title = "Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La0.7Sr0.3MnO3/(Ba, Sr)TiO 3/La0.7Sr0.3MnO3 multiferroic tunnel junctions",

abstract = "Tunnel junctions composed of two ferromagnetic electrodes separated by a ferroelectric barrier were fabricated from epitaxial La0.7Sr 0.3MnO3/Ba0.95Sr0.05TiO 3/La0.7Sr0.3MnO3 trilayers. Typical R-H curves with sharp-switched resistance states (magnetic parallel and antiparallel) of magnetic tunnel junctions have been observed up to room temperature. After applying a poling voltage, which reverses the barrier polarization, both the parallel and antiparallel resistance states will switch to different values. Clear tunneling magnetoresistance and tunneling electroresistance, hence the four resistance states have been observed at room temperature.",

author = "Yin, {Y. W.} and M. Raju and Hu, {W. J.} and Weng, {X. J.} and Li, {X. G.} and Q. Li",

note = "Funding Information: The work is supported in part by NSF DMR-0907604, DOE DE-FG02-08ER4653, Penn State MRSEC seed grant, and NSFC-50832007.",

year = "2011",

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doi = "10.1063/1.3564970",

language = "English (US)",

volume = "109",

journal = "Journal of Applied Physics",

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T1 - Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La0.7Sr0.3MnO3/(Ba, Sr)TiO 3/La0.7Sr0.3MnO3 multiferroic tunnel junctions

AU - Yin, Y. W.

AU - Raju, M.

AU - Hu, W. J.

AU - Weng, X. J.

AU - Li, X. G.

AU - Li, Q.

N1 - Funding Information: The work is supported in part by NSF DMR-0907604, DOE DE-FG02-08ER4653, Penn State MRSEC seed grant, and NSFC-50832007.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - Tunnel junctions composed of two ferromagnetic electrodes separated by a ferroelectric barrier were fabricated from epitaxial La0.7Sr 0.3MnO3/Ba0.95Sr0.05TiO 3/La0.7Sr0.3MnO3 trilayers. Typical R-H curves with sharp-switched resistance states (magnetic parallel and antiparallel) of magnetic tunnel junctions have been observed up to room temperature. After applying a poling voltage, which reverses the barrier polarization, both the parallel and antiparallel resistance states will switch to different values. Clear tunneling magnetoresistance and tunneling electroresistance, hence the four resistance states have been observed at room temperature.

AB - Tunnel junctions composed of two ferromagnetic electrodes separated by a ferroelectric barrier were fabricated from epitaxial La0.7Sr 0.3MnO3/Ba0.95Sr0.05TiO 3/La0.7Sr0.3MnO3 trilayers. Typical R-H curves with sharp-switched resistance states (magnetic parallel and antiparallel) of magnetic tunnel junctions have been observed up to room temperature. After applying a poling voltage, which reverses the barrier polarization, both the parallel and antiparallel resistance states will switch to different values. Clear tunneling magnetoresistance and tunneling electroresistance, hence the four resistance states have been observed at room temperature.

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JF - Journal of Applied Physics

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Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La_0.7Sr_0.3MnO₃/(Ba, Sr)TiO ₃/La_0.7Sr_0.3MnO₃ multiferroic tunnel junctions

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