Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La0.7Sr0.3MnO3/(Ba, Sr)TiO 3/La0.7Sr0.3MnO3 multiferroic tunnel junctions

Y. W. Yin, M. Raju, W. J. Hu, X. J. Weng, X. G. Li, Q. Li

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


Tunnel junctions composed of two ferromagnetic electrodes separated by a ferroelectric barrier were fabricated from epitaxial La0.7Sr 0.3MnO3/Ba0.95Sr0.05TiO 3/La0.7Sr0.3MnO3 trilayers. Typical R-H curves with sharp-switched resistance states (magnetic parallel and antiparallel) of magnetic tunnel junctions have been observed up to room temperature. After applying a poling voltage, which reverses the barrier polarization, both the parallel and antiparallel resistance states will switch to different values. Clear tunneling magnetoresistance and tunneling electroresistance, hence the four resistance states have been observed at room temperature.

Original languageEnglish (US)
Article number07D915
JournalJournal of Applied Physics
Issue number7
StatePublished - Apr 1 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/(Ba, Sr)TiO <sub>3</sub>/La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> multiferroic tunnel junctions'. Together they form a unique fingerprint.

Cite this