Coherent and directional emission at 1.55 μm from PbSe colloidal quantum dot electroluminescent device on silicon

Junseok Heo, Zhenyu Jiang, Jian Xu, Pallab Bhattacharya

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Coherent and directional emission at 1.55 μm from a PbSe colloidal quantum dot electroluminescent device on silicon is demonstrated. The quantum dots are sandwiched between a metallic mirror and a distributed Bragg reflector and are chemically treated in order to increase the electronic coupling. Electrons and holes are injected through ZnO nanocrystals and indium tin oxide, respectively. The measured electroluminescence exhibits a minimum linewidth of ∼3.1 nm corresponding to a cavity quality factor of ∼500 at a low injection current density of 3 A/cm2, and highly directional emission characteristics.

Original languageEnglish (US)
Pages (from-to)26394-26398
Number of pages5
JournalOptics Express
Volume19
Issue number27
DOIs
StatePublished - Dec 19 2011

Fingerprint

quantum dots
silicon
Bragg reflectors
electroluminescence
indium oxides
tin oxides
Q factors
nanocrystals
injection
mirrors
current density
cavities
electronics
electrons

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Heo, Junseok ; Jiang, Zhenyu ; Xu, Jian ; Bhattacharya, Pallab. / Coherent and directional emission at 1.55 μm from PbSe colloidal quantum dot electroluminescent device on silicon. In: Optics Express. 2011 ; Vol. 19, No. 27. pp. 26394-26398.
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Coherent and directional emission at 1.55 μm from PbSe colloidal quantum dot electroluminescent device on silicon. / Heo, Junseok; Jiang, Zhenyu; Xu, Jian; Bhattacharya, Pallab.

In: Optics Express, Vol. 19, No. 27, 19.12.2011, p. 26394-26398.

Research output: Contribution to journalArticle

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