Abstract
Understanding oxide interface-induced effects requires controlled epitaxial growth of films on well-defined substrate surfaces. While conventional film growth on ex situ prepared substrates has proven to be a successful route, the choices of appropriate substrates with atomically defined surfaces are limited. Here, by depositing La2/3Sr1/3MnO3 on Sr2RuO4 (001), we present an alternative method of growing oxide thin films on in situ cleaved surfaces of layered-structured substrates. Cleaving Sr2RuO4 at low temperature in ultrahigh vacuum exposes an atomically flat, solely SrO-terminated surface with up to micrometer-scale terraces. The deposition of La2/3Sr1/3MnO3 spontaneously diminishes the surface RuO6 in-plane rotational distortion of the substrate and results in a cubic-like perovskite film structure with (La/Sr)-O layer termination. The interface is atomically sharp without obvious deviation of lattice spacing and chemical valence, except in the first unit cell where Ru-Mn intermixing is observed. These results demonstrate that film growth on a cleaved substrate can be an alternative route to obtain well-defined interfaces and in addition increase the availability of substrates for future oxide films.
| Original language | English (US) |
|---|---|
| Article number | 104407 |
| Journal | Physical Review Materials |
| Volume | 2 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 18 2018 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
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Coherent growth of oxide films on a cleaved layered metal oxide substrate. / Siwakoti, Prahald; Guo, Hangwen; Wang, Zhen; Zhu, Yimei; Fittipaldi, Rosalba; Vecchione, Antonio; Wang, Y.; Mao, Zhiqiang; Zhang, Jiandi.
In: Physical Review Materials, Vol. 2, No. 10, 104407, 18.10.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Coherent growth of oxide films on a cleaved layered metal oxide substrate
AU - Siwakoti, Prahald
AU - Guo, Hangwen
AU - Wang, Zhen
AU - Zhu, Yimei
AU - Fittipaldi, Rosalba
AU - Vecchione, Antonio
AU - Wang, Y.
AU - Mao, Zhiqiang
AU - Zhang, Jiandi
PY - 2018/10/18
Y1 - 2018/10/18
N2 - Understanding oxide interface-induced effects requires controlled epitaxial growth of films on well-defined substrate surfaces. While conventional film growth on ex situ prepared substrates has proven to be a successful route, the choices of appropriate substrates with atomically defined surfaces are limited. Here, by depositing La2/3Sr1/3MnO3 on Sr2RuO4 (001), we present an alternative method of growing oxide thin films on in situ cleaved surfaces of layered-structured substrates. Cleaving Sr2RuO4 at low temperature in ultrahigh vacuum exposes an atomically flat, solely SrO-terminated surface with up to micrometer-scale terraces. The deposition of La2/3Sr1/3MnO3 spontaneously diminishes the surface RuO6 in-plane rotational distortion of the substrate and results in a cubic-like perovskite film structure with (La/Sr)-O layer termination. The interface is atomically sharp without obvious deviation of lattice spacing and chemical valence, except in the first unit cell where Ru-Mn intermixing is observed. These results demonstrate that film growth on a cleaved substrate can be an alternative route to obtain well-defined interfaces and in addition increase the availability of substrates for future oxide films.
AB - Understanding oxide interface-induced effects requires controlled epitaxial growth of films on well-defined substrate surfaces. While conventional film growth on ex situ prepared substrates has proven to be a successful route, the choices of appropriate substrates with atomically defined surfaces are limited. Here, by depositing La2/3Sr1/3MnO3 on Sr2RuO4 (001), we present an alternative method of growing oxide thin films on in situ cleaved surfaces of layered-structured substrates. Cleaving Sr2RuO4 at low temperature in ultrahigh vacuum exposes an atomically flat, solely SrO-terminated surface with up to micrometer-scale terraces. The deposition of La2/3Sr1/3MnO3 spontaneously diminishes the surface RuO6 in-plane rotational distortion of the substrate and results in a cubic-like perovskite film structure with (La/Sr)-O layer termination. The interface is atomically sharp without obvious deviation of lattice spacing and chemical valence, except in the first unit cell where Ru-Mn intermixing is observed. These results demonstrate that film growth on a cleaved substrate can be an alternative route to obtain well-defined interfaces and in addition increase the availability of substrates for future oxide films.
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U2 - 10.1103/PhysRevMaterials.2.104407
DO - 10.1103/PhysRevMaterials.2.104407
M3 - Article
AN - SCOPUS:85059866358
VL - 2
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 10
M1 - 104407
ER -