Coherent heteroepitaxy of Bi2 Se3 on GaAs (111)B

A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, N. Samarth

Research output: Contribution to journalArticlepeer-review

119 Scopus citations


We report the heteroepitaxy of single crystal thin films of Bi2 Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2 Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2 Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.

Original languageEnglish (US)
Article number262104
JournalApplied Physics Letters
Issue number26
StatePublished - Dec 27 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Coherent heteroepitaxy of Bi2 Se3 on GaAs (111)B'. Together they form a unique fingerprint.

Cite this