Colloids and surfaces in chemical-mechanical polishing: An adsorptive model for abrasive particle/oxide substrate interactions

Research output: Contribution to conferencePaperpeer-review

Abstract

Using silica (glass) as a model material, an approach is presented whereby chemical-mechanical polishing (CMP) of oxide substrates may be visualized as an adsorptive removal process. The adsorption of substrate-derived species is quantified by treating it as a surface complexation reaction. Mass action equations are derived for the relevant surface reactions (complex formation, and protonation/deprotonation of surface hydroxyls). By combining these equations with mass balances on surface sites and dissolved species, it is shown that the surface concentration of substrate-derived species (and, therefore, the material removal rate) goes through a maximum as the point of zero charge (pzc) of the abrasive particle increases. Further, it is shown that the surface concentration of substrate-derived species (and, therefore, the material removal rate) is highest for the abrasive material whose pzc coincides with the pH of the polishing slurry.

Original languageEnglish (US)
Pages83-91
Number of pages9
StatePublished - Dec 1 2003
EventChemical Mechanical Planarization VI - Proceddings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherChemical Mechanical Planarization VI - Proceddings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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