Color conversion in III-nitride micro-LEDs with embedded nanostructures

We report in this conference the modeling analysis of absorption and color conversion characteristics of III-nitride micro-LED arrays embedded with nanostructures. While nanoporous GaN layers in the micro-LED pixels have been reported to function as the color-converting element by incorporating quantum dot-based nanophosphor inside the porous cavity, our computational study reveals that extraction efficiencies of both excitation (blue) and down-conversion (red) light from the nanophosphor-coupled LED structure decrease dramatically with porosity and the thickness of embeded down-conversion layer s. The cross-talk of down-conversion light between adjacent micro-LED pixels is also found to be substantially higher compared to the excitation light cross-talk due to the location of the phosphors in the pore cavities and the resultant strong scattering by the surrounding nanopores. Studying and attempting to overcome those color-conversion challenges of the nanoporous GaN based micro-LEDs could pave the way of developing full-color miro-LED display panels that simultaneously preserve the high-resolution and efficiency performances of micro-LED display devices.