Colossal negative magnetoresistance in dilute fluorinated graphene

X. Hong, S. H. Cheng, C. Herding, J. Zhu

Research output: Contribution to journalArticle

134 Scopus citations

Abstract

Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by quantum interference.

Original languageEnglish (US)
Article number085410
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number8
DOIs
StatePublished - Feb 14 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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