Colossal negative magnetoresistance in dilute fluorinated graphene

X. Hong, S. H. Cheng, C. Herding, Jun Zhu

Research output: Contribution to journalArticle

126 Citations (Scopus)

Abstract

Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by quantum interference.

Original languageEnglish (US)
Article number085410
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number8
DOIs
StatePublished - Feb 14 2011

Fingerprint

Adatoms
Graphite
Magnetoresistance
Graphene
adatoms
graphene
Metal insulator transition
Magnetism
engineers
Carrier concentration
routes
insulators
saturation
interference
Engineers
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{8c9144a4cc02498da11006ba304ef12b,
title = "Colossal negative magnetoresistance in dilute fluorinated graphene",
abstract = "Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by quantum interference.",
author = "X. Hong and Cheng, {S. H.} and C. Herding and Jun Zhu",
year = "2011",
month = "2",
day = "14",
doi = "10.1103/PhysRevB.83.085410",
language = "English (US)",
volume = "83",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "8",

}

Colossal negative magnetoresistance in dilute fluorinated graphene. / Hong, X.; Cheng, S. H.; Herding, C.; Zhu, Jun.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 8, 085410, 14.02.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Colossal negative magnetoresistance in dilute fluorinated graphene

AU - Hong, X.

AU - Cheng, S. H.

AU - Herding, C.

AU - Zhu, Jun

PY - 2011/2/14

Y1 - 2011/2/14

N2 - Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by quantum interference.

AB - Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by quantum interference.

UR - http://www.scopus.com/inward/record.url?scp=79960991432&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960991432&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.83.085410

DO - 10.1103/PhysRevB.83.085410

M3 - Article

VL - 83

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 8

M1 - 085410

ER -