Comment on "E' centers and nitrogen-related defects in silicon dioxide films"

W. L. Warren, Patrick M. Lenahan

Research output: Contribution to journalReview article

1 Scopus citations

Abstract

The defect centers in silicon dioxide films reported earlier (ref. 1), are discussed. ESR spectra were recorded at higher microwave power in order to facilitate detection of N dangling-bonds. Such bonds were not observed in any significant concentration.(AIP).

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume59
Issue number22
DOIs
StatePublished - Dec 1 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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