Comment on "theory of defect levels and the 'band gap problem' in silicon"

Blair R. Tuttle, Sokrates T. Pantelides

Research output: Contribution to journalReview article

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Abstract

A Comment on the Letter by Peter A. Schultz, Phys. Rev. Lett.PRLTAO0031-9007 96, 246401 (2006)10.1103/PhysRevLett.96.246401. The authors of the Letter offer a Reply.

Original languageEnglish (US)
Article number089701
JournalPhysical Review Letters
Volume101
Issue number8
DOIs
Publication statusPublished - Aug 21 2008

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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