Compact 3-D-SRAM Memory with Concurrent Row and Column Data Access Capability Using Sequential Monolithic 3-D Integration

Srivatsa Srinivasa, Xueqing Li, Meng Fan Chang, John Sampson, Sumeet Kumar Gupta, Vijaykrishnan Narayanan

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

This paper proposes the use of monolithic 3-D integration technology in designing a novel two-layer 3-D-static random access memory (3-D-SRAM) cell in standard 6T-SRAM footprint. The proposed 3-D-SRAM cell is capable of data access from both the layers. The cell is designed to retrieve row-wise and column-wise data concurrently from the memory array. This memory design can cater to applications and workloads requiring multidimensional data access for enhancing system performance. The novel 3-D layout technique ensures the same footprint as a 6T-SRAM cell despite enhancing the functionality. The design ensures no degradation in the cell stability and performance. Voltage reduction in layer-2 provides 5.4 × power savings during column-wise data access. We analyze the implications of employing the proposed SRAM to achieve efficient data access for integral image algorithm. We obtain 2.15 × savings in access time and 7.81% access energy savings while accessing data from a 32-kB memory array to compute integral image for a region of 32 rows and 16 columns.

Original languageEnglish (US)
Pages (from-to)671-683
Number of pages13
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume26
Issue number4
DOIs
StatePublished - Apr 2018

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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