Comparing the structure and behavior of point defects in silicon oxynitride gate dielectrics formed by NH3-nitridation and N2O-growth/nitridation

J. T. Yount, Patrick M. Lenahan, N. S. Saks, G. A. Brown

Research output: Contribution to journalConference article

Abstract

In this work, an electron spin resonance study of NH3-nitrided, N2O-nitrided, and N2O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH3-nitridation is responsible for the introduction of bridging nitrogen centers, high capture cross section neutral electron traps, while N2O-processed dielectrics never exhibit these defects. In addition, structural changes at the interface due to nitridation result in observable differences in the interfacial defects.

Original languageEnglish (US)
Pages (from-to)31-36
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume338
StatePublished - Dec 1 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 5 1994Apr 8 1994

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Nitridation
oxynitrides
Gate dielectrics
Silicon
Point defects
point defects
Electron traps
Defects
Defect structures
defects
silicon
absorption cross sections
Oxides
Paramagnetic resonance
electron paramagnetic resonance
Nitrogen
traps
histories
nitrogen
oxides

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "In this work, an electron spin resonance study of NH3-nitrided, N2O-nitrided, and N2O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH3-nitridation is responsible for the introduction of bridging nitrogen centers, high capture cross section neutral electron traps, while N2O-processed dielectrics never exhibit these defects. In addition, structural changes at the interface due to nitridation result in observable differences in the interfacial defects.",
author = "Yount, {J. T.} and Lenahan, {Patrick M.} and Saks, {N. S.} and Brown, {G. A.}",
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journal = "Materials Research Society Symposium - Proceedings",
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T1 - Comparing the structure and behavior of point defects in silicon oxynitride gate dielectrics formed by NH3-nitridation and N2O-growth/nitridation

AU - Yount, J. T.

AU - Lenahan, Patrick M.

AU - Saks, N. S.

AU - Brown, G. A.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - In this work, an electron spin resonance study of NH3-nitrided, N2O-nitrided, and N2O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH3-nitridation is responsible for the introduction of bridging nitrogen centers, high capture cross section neutral electron traps, while N2O-processed dielectrics never exhibit these defects. In addition, structural changes at the interface due to nitridation result in observable differences in the interfacial defects.

AB - In this work, an electron spin resonance study of NH3-nitrided, N2O-nitrided, and N2O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH3-nitridation is responsible for the introduction of bridging nitrogen centers, high capture cross section neutral electron traps, while N2O-processed dielectrics never exhibit these defects. In addition, structural changes at the interface due to nitridation result in observable differences in the interfacial defects.

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M3 - Conference article

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