Comparing the structure and behavior of point defects in silicon oxynitride gate dielectrics formed by NH3-nitridation and N2O-growth/nitridation

J. T. Yount, P. M. Lenahan, N. S. Saks, G. A. Brown

Research output: Contribution to journalConference articlepeer-review

Abstract

In this work, an electron spin resonance study of NH3-nitrided, N2O-nitrided, and N2O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH3-nitridation is responsible for the introduction of bridging nitrogen centers, high capture cross section neutral electron traps, while N2O-processed dielectrics never exhibit these defects. In addition, structural changes at the interface due to nitridation result in observable differences in the interfacial defects.

Original languageEnglish (US)
Pages (from-to)31-36
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume338
DOIs
StatePublished - Jan 1 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 5 1994Apr 8 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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