Comparison of Au/GaAs Schottky contact properties modified by ion bombardment damage and mechanical polishing

Y. G. Wang, S. Ashok

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A comparative study of the influence of crystal damage on the electrical properties of Au/GaAs Schottky barriers has been made with 10-keV Ar ion implantation and mechanical polishing, respectively. It has been found that the same trend in barrier height modification occurs for both cases, viz., a decrease in barrier height for n-GaAs and an increase for p-GaAs. This behavior is qualitatively similar to that in Si under ion bombardment damage and has been attributed to the generation of positively charged defect states in a shallow surface layer. However, in the case of GaAs, considerable carrier compensation effects are also in evidence, giving rise to large values of series resistance and shunt conductance arising from surface leakage. These results have implications in the formation of Ohmic contacts to GaAs and in the adaptation of ion-assisted processes for GaAs surface modification.

Original languageEnglish (US)
Pages (from-to)1548-1551
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume6
Issue number3
DOIs
StatePublished - May 1988

Fingerprint

Ion bombardment
Polishing
polishing
bombardment
electric contacts
damage
Ohmic contacts
Ion implantation
Surface treatment
ions
Electric properties
shunts
Defects
Crystals
ion implantation
surface layers
Ions
leakage
electrical properties
trends

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "A comparative study of the influence of crystal damage on the electrical properties of Au/GaAs Schottky barriers has been made with 10-keV Ar ion implantation and mechanical polishing, respectively. It has been found that the same trend in barrier height modification occurs for both cases, viz., a decrease in barrier height for n-GaAs and an increase for p-GaAs. This behavior is qualitatively similar to that in Si under ion bombardment damage and has been attributed to the generation of positively charged defect states in a shallow surface layer. However, in the case of GaAs, considerable carrier compensation effects are also in evidence, giving rise to large values of series resistance and shunt conductance arising from surface leakage. These results have implications in the formation of Ohmic contacts to GaAs and in the adaptation of ion-assisted processes for GaAs surface modification.",
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Comparison of Au/GaAs Schottky contact properties modified by ion bombardment damage and mechanical polishing. / Wang, Y. G.; Ashok, S.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 6, No. 3, 05.1988, p. 1548-1551.

Research output: Contribution to journalArticle

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