Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy

Gokul Prakash, Jennifer L. Gray, Yong Su Lee, J. Kanicki

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In this paper high resolution transmission electron microscopy analysis is performed on indium gallium zinc oxide thin film transistors to determine the crystal structure of the material. The relative elemental concentrations of indium, gallium, zinc and oxygen were quantified and analyzed using energy dispersive spectroscopy before and after subjection to positive gate bias temperature stress at 80 °C. Notable changes in the concentration of oxygen in the device channel were observed along with a reduced concentration of the elements indium, gallium and zinc after electrical stressing. We speculate this relative reduction in metal concentration could be attributed to the outdiffusion of metal ions from the channel region into the surrounding thermal oxide and the increase in the oxygen concentration in the stressed device is related to electric field assisted adsorption of oxygen from the ambient.

Original languageEnglish (US)
Article number055008
JournalSemiconductor Science and Technology
Volume30
Issue number5
DOIs
StatePublished - May 1 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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