Comparison of discrete-storage nonvolatile memories: Advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory

Qin Wang, Rui Jia, Weihua Guan, Weilong Li, Qi Liu, Yuan Hu, Shibing Long, Baoqin Chen, Ming Liu, Tianchun Ye, Wensheng Lu, Long Jiang

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

In this paper, the memory characteristics of two kinds of metal-oxide-semiconductor (MOS) capacitors embedded with Au nanocrytals are investigated: hybrid MOS with nanocrystals (NCs) fabricated by chemical syntheses and rapid thermal annealing (RTA) MOS with NCs fabricated by RTA. For both kinds of devices, the capacitance versus voltage (C-V) curves clearly indicate the charge storage in the NCs. The hybrid MOS, however, shows a larger memory window, as compared with RTA MOS. The retention characteristics of the two MOS devices are also investigated. The capacitance versus time (C-t) measurement shows that the hybrid MOS capacitor embedded with Au nanocrystals has a longer retention time. The mechanism of longer retention time for hybrid MOS capacitor is qualitatively discussed.

Original languageEnglish (US)
Article number035109
JournalJournal of Physics D: Applied Physics
Volume41
Issue number3
DOIs
StatePublished - Feb 7 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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