Comparison of etching tools for resist pattern transfer

Mark W. Horn, Mark A. Hartney, Roderick R. Kunz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

Several etching tools were evaluated for the oxygen-based plasma pattern transfer step in surface imaging and multilayer resist processes. These tools include a conventional parallel-plate reactive ion etcher, a magnetically enhanced reactive ion etcher, an electron cyclotron resonance reactor, and a Helicon (rf helical resonator) reactor. The performance of each tool was examined with respect to etch rate, etch profile, selectivity between the imaging layer and the pattern transfer layer, etch uniformity, etching residue, linewidth uniformity, and process latitude.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages448-460
Number of pages13
ISBN (Print)0819408271, 9780819408273
DOIs
StatePublished - 1992
EventAdvances in Resist Technology and Processing IX - San Jose, CA, USA
Duration: Mar 9 1992Mar 10 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1672
ISSN (Print)0277-786X

Other

OtherAdvances in Resist Technology and Processing IX
CitySan Jose, CA, USA
Period3/9/923/10/92

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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