Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

Roman Engel-Herbert, Yoontae Hwang, Susanne Stemmer

Research output: Contribution to journalArticle

250 Citations (Scopus)

Abstract

Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor interfaces and their distribution in the semiconductor band gap are compared. The conductance method, the Berglund intergral, the Castagń-Vapaille (high-low frequency), and Terman methods are applied to admittance measurements from metal oxide semiconductor capacitors (MOSCAPs) with high- k/ In0.53 Ga0.47 As interfaces with different interface trap densities. The results are discussed in the context of the specifics of the In 0.53 Ga0.47 As band structure. The influence of different conduction band approximations for determining the ideal capacitance-voltage (CV) characteristics and those of the MOSCAP parameters on the extracted interface trap density are investigated. The origins of discrepancies in the interface trap densities determined from the different methods are discussed. Commonly observed features in the CV characteristics of high- k/ In 0.53 Ga0.47 As interfaces are interpreted and guidelines are developed to obtain reliable estimates for interface trap densities and the degree of Fermi level (un)pinning for high- k/ In0.53 Ga0.47 As interfaces.

Original languageEnglish (US)
Article number124101
JournalJournal of Applied Physics
Volume108
Issue number12
DOIs
StatePublished - Dec 15 2010

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traps
capacitance-voltage characteristics
metal oxide semiconductors
capacitors
electrical impedance
conduction bands
permittivity
low frequencies
estimates
approximation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor interfaces and their distribution in the semiconductor band gap are compared. The conductance method, the Berglund intergral, the Castagń-Vapaille (high-low frequency), and Terman methods are applied to admittance measurements from metal oxide semiconductor capacitors (MOSCAPs) with high- k/ In0.53 Ga0.47 As interfaces with different interface trap densities. The results are discussed in the context of the specifics of the In 0.53 Ga0.47 As band structure. The influence of different conduction band approximations for determining the ideal capacitance-voltage (CV) characteristics and those of the MOSCAP parameters on the extracted interface trap density are investigated. The origins of discrepancies in the interface trap densities determined from the different methods are discussed. Commonly observed features in the CV characteristics of high- k/ In 0.53 Ga0.47 As interfaces are interpreted and guidelines are developed to obtain reliable estimates for interface trap densities and the degree of Fermi level (un)pinning for high- k/ In0.53 Ga0.47 As interfaces.",
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Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces. / Engel-Herbert, Roman; Hwang, Yoontae; Stemmer, Susanne.

In: Journal of Applied Physics, Vol. 108, No. 12, 124101, 15.12.2010.

Research output: Contribution to journalArticle

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AB - Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor interfaces and their distribution in the semiconductor band gap are compared. The conductance method, the Berglund intergral, the Castagń-Vapaille (high-low frequency), and Terman methods are applied to admittance measurements from metal oxide semiconductor capacitors (MOSCAPs) with high- k/ In0.53 Ga0.47 As interfaces with different interface trap densities. The results are discussed in the context of the specifics of the In 0.53 Ga0.47 As band structure. The influence of different conduction band approximations for determining the ideal capacitance-voltage (CV) characteristics and those of the MOSCAP parameters on the extracted interface trap density are investigated. The origins of discrepancies in the interface trap densities determined from the different methods are discussed. Commonly observed features in the CV characteristics of high- k/ In 0.53 Ga0.47 As interfaces are interpreted and guidelines are developed to obtain reliable estimates for interface trap densities and the degree of Fermi level (un)pinning for high- k/ In0.53 Ga0.47 As interfaces.

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