COMPARISON OF POSITIVE CHARGE GENERATION IN HIGH FIELD STRESSING AND IONIZING RADIATION ON MOS STRUCTURES.

W. L. Warren, Patrick M. Lenahan

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Abstract

The effects of ionizing radiation and high field stressing on metal-oxide-silicon oxides are compared. Using electron spin resonance, the authors compare the point defects responsible for the positive charge generated by ionizing radiation and high field stressing. The two processes have been found to be different in that the positive charge generated by ionizing radiation is almost entirely due to E' centers in the oxide; however, less than half the positive charge generated by high field stressing can be accounted for by E' centers.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
VolumeNS-34
Issue number6
StatePublished - Dec 1 1987

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All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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