TY - JOUR
T1 - Complete matrix properties of [0 0 1]c and [0 1 1]c poled 0.33Pb(In1/2Nb1/2)O3-0.38Pb(Mg 1/3Nb2/3)O3-0.29PbTiO3 single crystals
AU - Sun, Enwei
AU - Zhang, Rui
AU - Wu, Fengmin
AU - Cao, Wenwu
N1 - Funding Information:
This research was supported by the National Key Basic Research Program of China under Grant No. 2013CB632900 , the NSFC under Grant Nos. 50602009 and 50972034 , and the NIH under Grant No. P41-EB21820 . High quality single crystals were provided by H.C. Materials Co., Illinois 60440, USA.
PY - 2013/3/15
Y1 - 2013/3/15
N2 - The elastic, piezoelectric, and dielectric properties of [0 0 1] c and [0 1 1]c poled 0.33Pb(In1/2Nb 1/2)O3-0.38Pb(Mg1/3Nb2/3)O 3-0.29PbTiO3 single crystals have been fully characterized at room temperature, and the temperature and frequency dependence of the dielectric susceptibility ε33 were also measured. The depoling temperature of this crystal is more than 20 °C higher than that of the corresponding binary 0.71Pb(Mg1/3Nb2/3)O 3-0.29PbTiO3 system. From the measured P-E hysteresis loops, the coercive fields along [0 0 1]c and [0 1 1]c directions have been determined to be 6.0 kV/cm and 6.6 kV/cm, respectively, which indicate that these domain engineered ternary relaxor-based ferroelectric single crystals are excellent candidates for high-power applications.
AB - The elastic, piezoelectric, and dielectric properties of [0 0 1] c and [0 1 1]c poled 0.33Pb(In1/2Nb 1/2)O3-0.38Pb(Mg1/3Nb2/3)O 3-0.29PbTiO3 single crystals have been fully characterized at room temperature, and the temperature and frequency dependence of the dielectric susceptibility ε33 were also measured. The depoling temperature of this crystal is more than 20 °C higher than that of the corresponding binary 0.71Pb(Mg1/3Nb2/3)O 3-0.29PbTiO3 system. From the measured P-E hysteresis loops, the coercive fields along [0 0 1]c and [0 1 1]c directions have been determined to be 6.0 kV/cm and 6.6 kV/cm, respectively, which indicate that these domain engineered ternary relaxor-based ferroelectric single crystals are excellent candidates for high-power applications.
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U2 - 10.1016/j.jallcom.2012.11.111
DO - 10.1016/j.jallcom.2012.11.111
M3 - Article
AN - SCOPUS:84873857064
SN - 0925-8388
VL - 553
SP - 267
EP - 269
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -