Composite ohmic contacts to SiC

A. V. Adedeji, A. C. Ahyi, J. R. Williams, M. J. Bozack, Suzanne E. Mohney, Bangzhi Liu, J. D. Scofield

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Composite ohmic contacts designed for SiC devices operating in air at 350°C have been studied. Ohmic contacts to n- and p-4H-SiC were protected against inter-diffusion and oxidation by Ta-Si-N layers obtained by sputter deposition from a TaSi2 target in a mixture of Ar and N2. Platinum was sputter-deposited at 250°C to promote adhesion between the Ta-SiN barrier layer and a thick Au cap layer. Platinum also acts as a barrier to the diffusion of Au. The electrical and mechanical characteristics of the composite contacts were stable after hundreds of hours of annealing in air at 350°C. We report the effects of thermal aging on the specific contact resistance and the semiconductor sheet resistance, and the results of wire bond pull and shear tests following aging for Ta-Si-N / Pt / Au stacks deposited on both SiO2 dielectric layers and the ohmic contact layers.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
Pages879-882
Number of pages4
EditionPART 2
StatePublished - Dec 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Ohmic contacts
electric contacts
Platinum
composite materials
Composite materials
Sputter deposition
platinum
Thermal aging
Sheet resistance
Contact resistance
Air
air
Adhesion
barrier layers
Aging of materials
contact resistance
caps
Wire
Annealing
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Adedeji, A. V., Ahyi, A. C., Williams, J. R., Bozack, M. J., Mohney, S. E., Liu, B., & Scofield, J. D. (2006). Composite ohmic contacts to SiC. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 ed., pp. 879-882). (Materials Science Forum; Vol. 527-529, No. PART 2).
Adedeji, A. V. ; Ahyi, A. C. ; Williams, J. R. ; Bozack, M. J. ; Mohney, Suzanne E. ; Liu, Bangzhi ; Scofield, J. D. / Composite ohmic contacts to SiC. Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2. ed. 2006. pp. 879-882 (Materials Science Forum; PART 2).
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Adedeji, AV, Ahyi, AC, Williams, JR, Bozack, MJ, Mohney, SE, Liu, B & Scofield, JD 2006, Composite ohmic contacts to SiC. in Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 edn, Materials Science Forum, no. PART 2, vol. 527-529, pp. 879-882, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.

Composite ohmic contacts to SiC. / Adedeji, A. V.; Ahyi, A. C.; Williams, J. R.; Bozack, M. J.; Mohney, Suzanne E.; Liu, Bangzhi; Scofield, J. D.

Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2. ed. 2006. p. 879-882 (Materials Science Forum; Vol. 527-529, No. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Composite ohmic contacts designed for SiC devices operating in air at 350°C have been studied. Ohmic contacts to n- and p-4H-SiC were protected against inter-diffusion and oxidation by Ta-Si-N layers obtained by sputter deposition from a TaSi2 target in a mixture of Ar and N2. Platinum was sputter-deposited at 250°C to promote adhesion between the Ta-SiN barrier layer and a thick Au cap layer. Platinum also acts as a barrier to the diffusion of Au. The electrical and mechanical characteristics of the composite contacts were stable after hundreds of hours of annealing in air at 350°C. We report the effects of thermal aging on the specific contact resistance and the semiconductor sheet resistance, and the results of wire bond pull and shear tests following aging for Ta-Si-N / Pt / Au stacks deposited on both SiO2 dielectric layers and the ohmic contact layers.

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Adedeji AV, Ahyi AC, Williams JR, Bozack MJ, Mohney SE, Liu B et al. Composite ohmic contacts to SiC. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. 2006. p. 879-882. (Materials Science Forum; PART 2).