Compositional effects on the piezoelectric and ferroelectric properties of chemical solution deposited PZT thin films

Dong Joo Kim, Jon-Paul Maria, Angus I. Kingon

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The piezoelectric, dielectric, and ferroelectric properties of highly (111)-textured polycrystalline lead zirconate titanate (PZT) films as a function of Zr/Ti composition have been investigated. The peak in piezoelectric coefficient at the morphotropic phase boundary (MPB) observed in bulk PZT ceramics has not been found in thin film PZTs. Measurement of the piezoelectric response as a function of AC amplitude suggests that non-180° domain wall motion in these films is negligible, indicating that the extrinsic contribution to the room temperature dielectric constant is dominated by only 180° domain wall motion. The semi-empirical phenomenological equation relating the piezoelectric coefficient to measured polarization and permittivity values is demonstrated to give an excellent description of the piezoelectric behavior in these films, assuming bulk electrostrictive coefficients. The small deviation between calculated and measured piezoelectric coefficients as well as the dependence of piezoelectric and polarization behavior on the external dc field, i.e., hysteresis loop, are suggested to be primarily due to backswitching of 180° domains.

Original languageEnglish (US)
Pages (from-to)351-356
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume688
StatePublished - Jan 1 2002
EventFerroelectric Thin Films X - Boston, MA, United States
Duration: Nov 25 2001Nov 29 2001

Fingerprint

Ferroelectric materials
Lead
Domain walls
Thin films
Permittivity
coefficients
thin films
Polarization
domain wall
Phase boundaries
permittivity
Hysteresis loops
polarization
dielectric properties
alternating current
hysteresis
ceramics
Chemical analysis
deviation
lead titanate zirconate

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "The piezoelectric, dielectric, and ferroelectric properties of highly (111)-textured polycrystalline lead zirconate titanate (PZT) films as a function of Zr/Ti composition have been investigated. The peak in piezoelectric coefficient at the morphotropic phase boundary (MPB) observed in bulk PZT ceramics has not been found in thin film PZTs. Measurement of the piezoelectric response as a function of AC amplitude suggests that non-180° domain wall motion in these films is negligible, indicating that the extrinsic contribution to the room temperature dielectric constant is dominated by only 180° domain wall motion. The semi-empirical phenomenological equation relating the piezoelectric coefficient to measured polarization and permittivity values is demonstrated to give an excellent description of the piezoelectric behavior in these films, assuming bulk electrostrictive coefficients. The small deviation between calculated and measured piezoelectric coefficients as well as the dependence of piezoelectric and polarization behavior on the external dc field, i.e., hysteresis loop, are suggested to be primarily due to backswitching of 180° domains.",
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Compositional effects on the piezoelectric and ferroelectric properties of chemical solution deposited PZT thin films. / Kim, Dong Joo; Maria, Jon-Paul; Kingon, Angus I.

In: Materials Research Society Symposium - Proceedings, Vol. 688, 01.01.2002, p. 351-356.

Research output: Contribution to journalConference article

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AU - Kim, Dong Joo

AU - Maria, Jon-Paul

AU - Kingon, Angus I.

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N2 - The piezoelectric, dielectric, and ferroelectric properties of highly (111)-textured polycrystalline lead zirconate titanate (PZT) films as a function of Zr/Ti composition have been investigated. The peak in piezoelectric coefficient at the morphotropic phase boundary (MPB) observed in bulk PZT ceramics has not been found in thin film PZTs. Measurement of the piezoelectric response as a function of AC amplitude suggests that non-180° domain wall motion in these films is negligible, indicating that the extrinsic contribution to the room temperature dielectric constant is dominated by only 180° domain wall motion. The semi-empirical phenomenological equation relating the piezoelectric coefficient to measured polarization and permittivity values is demonstrated to give an excellent description of the piezoelectric behavior in these films, assuming bulk electrostrictive coefficients. The small deviation between calculated and measured piezoelectric coefficients as well as the dependence of piezoelectric and polarization behavior on the external dc field, i.e., hysteresis loop, are suggested to be primarily due to backswitching of 180° domains.

AB - The piezoelectric, dielectric, and ferroelectric properties of highly (111)-textured polycrystalline lead zirconate titanate (PZT) films as a function of Zr/Ti composition have been investigated. The peak in piezoelectric coefficient at the morphotropic phase boundary (MPB) observed in bulk PZT ceramics has not been found in thin film PZTs. Measurement of the piezoelectric response as a function of AC amplitude suggests that non-180° domain wall motion in these films is negligible, indicating that the extrinsic contribution to the room temperature dielectric constant is dominated by only 180° domain wall motion. The semi-empirical phenomenological equation relating the piezoelectric coefficient to measured polarization and permittivity values is demonstrated to give an excellent description of the piezoelectric behavior in these films, assuming bulk electrostrictive coefficients. The small deviation between calculated and measured piezoelectric coefficients as well as the dependence of piezoelectric and polarization behavior on the external dc field, i.e., hysteresis loop, are suggested to be primarily due to backswitching of 180° domains.

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