The interfacial reactions between Ni, Pd, or Au thin films and Al xGa 1-x epitaxial layer with composition x=0.15 and 0.47 were investigated. The compositional shift of the sample induced by the reactions beneath the film to a Al-rich composition was studied using X-ray photoelectron spectroscopy and scanning transmission electron microscopy. The influence of the compositional shift in Al xGa 1-x stoichiometry on the electrical properties of annealed ohmic contacts and Schottky contacts to n-type and p-type of the sample were also discussed. The diffusion of Ga into the Ni film was found after annealing of Ni/Al 0.47Ga 0.53 for 60 min at 850°C.
|Original language||English (US)|
|Number of pages||9|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Mar 1 2004|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering