Compositional shift in Al xGa 1-xN beneath annealed metal contacts

B. A. Hull, S. E. Mohney, U. Chowdhury, R. D. Dupuis

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The interfacial reactions between Ni, Pd, or Au thin films and Al xGa 1-x epitaxial layer with composition x=0.15 and 0.47 were investigated. The compositional shift of the sample induced by the reactions beneath the film to a Al-rich composition was studied using X-ray photoelectron spectroscopy and scanning transmission electron microscopy. The influence of the compositional shift in Al xGa 1-x stoichiometry on the electrical properties of annealed ohmic contacts and Schottky contacts to n-type and p-type of the sample were also discussed. The diffusion of Ga into the Ni film was found after annealing of Ni/Al 0.47Ga 0.53 for 60 min at 850°C.

Original languageEnglish (US)
Pages (from-to)654-662
Number of pages9
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number2
StatePublished - Mar 1 2004

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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