Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films

J. X. Zhang, Y. L. Li, S. Choudhury, L. Q. Chen, Y. H. Chu, F. Zavaliche, M. P. Cruz, R. Ramesh, Q. X. Jia

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Abstract

Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the {110}c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed.

Original languageEnglish (US)
Article number094111
JournalJournal of Applied Physics
Volume103
Issue number9
DOIs
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Zhang, J. X., Li, Y. L., Choudhury, S., Chen, L. Q., Chu, Y. H., Zavaliche, F., Cruz, M. P., Ramesh, R., & Jia, Q. X. (2008). Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films. Journal of Applied Physics, 103(9), [094111]. https://doi.org/10.1063/1.2927385