Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films

J. X. Zhang, Y. L. Li, S. Choudhury, Long-qing Chen, Y. H. Chu, F. Zavaliche, M. P. Cruz, R. Ramesh, Q. X. Jia

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the {110}c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed.

Original languageEnglish (US)
Article number094111
JournalJournal of Applied Physics
Volume103
Issue number9
DOIs
StatePublished - May 26 2008

Fingerprint

computerized simulation
thin films
domain wall
electrostatics
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Zhang, J. X., Li, Y. L., Choudhury, S., Chen, L., Chu, Y. H., Zavaliche, F., ... Jia, Q. X. (2008). Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films. Journal of Applied Physics, 103(9), [094111]. https://doi.org/10.1063/1.2927385
Zhang, J. X. ; Li, Y. L. ; Choudhury, S. ; Chen, Long-qing ; Chu, Y. H. ; Zavaliche, F. ; Cruz, M. P. ; Ramesh, R. ; Jia, Q. X. / Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 9.
@article{928bd5731cf04c10bb71a650b1fb35e8,
title = "Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films",
abstract = "Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the {110}c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed.",
author = "Zhang, {J. X.} and Li, {Y. L.} and S. Choudhury and Long-qing Chen and Chu, {Y. H.} and F. Zavaliche and Cruz, {M. P.} and R. Ramesh and Jia, {Q. X.}",
year = "2008",
month = "5",
day = "26",
doi = "10.1063/1.2927385",
language = "English (US)",
volume = "103",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

Zhang, JX, Li, YL, Choudhury, S, Chen, L, Chu, YH, Zavaliche, F, Cruz, MP, Ramesh, R & Jia, QX 2008, 'Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films', Journal of Applied Physics, vol. 103, no. 9, 094111. https://doi.org/10.1063/1.2927385

Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films. / Zhang, J. X.; Li, Y. L.; Choudhury, S.; Chen, Long-qing; Chu, Y. H.; Zavaliche, F.; Cruz, M. P.; Ramesh, R.; Jia, Q. X.

In: Journal of Applied Physics, Vol. 103, No. 9, 094111, 26.05.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films

AU - Zhang, J. X.

AU - Li, Y. L.

AU - Choudhury, S.

AU - Chen, Long-qing

AU - Chu, Y. H.

AU - Zavaliche, F.

AU - Cruz, M. P.

AU - Ramesh, R.

AU - Jia, Q. X.

PY - 2008/5/26

Y1 - 2008/5/26

N2 - Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the {110}c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed.

AB - Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the {110}c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed.

UR - http://www.scopus.com/inward/record.url?scp=43949098968&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43949098968&partnerID=8YFLogxK

U2 - 10.1063/1.2927385

DO - 10.1063/1.2927385

M3 - Article

AN - SCOPUS:43949098968

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 094111

ER -