Conductance fluctuation and weak antilocalization in epitaxial Bi 2Se3

Sadashige Matsuo, Tomohiro Koyama, Kazutoshi Shimamura, Tomonori Arakawa, Yoshitaka Nishihara, Daichi Chiba, Kensuke Kobayashi, Teruo Ono, Cui-Zu Chang, Ke He, Xu Cun Ma, Qi Kun Xue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the magnetoresistance fluctuation in a submicrometer-sized Hall-bar made of epitaxial Bi2Se3 thin film. We observed the magnetoresistance fluctuation below 18 K and analyzed the fluctuation as universal conductance fluctuation (UCF). According to our results, the temperature dependence is quantitatively explained by the conventional UCF theory and the coherence length derived from UCF is consistent with that derived from weak antilocalization effect.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages193-194
Number of pages2
Volume1566
ISBN (Print)9780735411944
DOIs
StatePublished - 2013
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: Jul 29 2012Aug 3 2012

Other

Other31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period7/29/128/3/12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Matsuo, S., Koyama, T., Shimamura, K., Arakawa, T., Nishihara, Y., Chiba, D., Kobayashi, K., Ono, T., Chang, C-Z., He, K., Ma, X. C., & Xue, Q. K. (2013). Conductance fluctuation and weak antilocalization in epitaxial Bi 2Se3 In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (Vol. 1566, pp. 193-194). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848351