Conducting mis diode gas detectors: the Pd/SiOx/Si hydrogen sensor

S. J. Fonash, H. Huston, S. Ashok

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

A survey of barrier formation and transport in MS and conducting MIS structures is presented and used to describe the hydrogen sensitivity of Pd/SiOx/Si structures. The presence of the interfacial oxide is shown to be necessary for the palladium diode to be sensitive to hydrogen. The sensitivity of highly responsive devices is shown to be due to Schottky barrier modification in the presence of hydrogen and not to an additional channel of transport caused by an increased interface state density in the presence of hydrogen.

Original languageEnglish (US)
Pages (from-to)363-369
Number of pages7
JournalSensors and Actuators
Volume2
Issue numberC
DOIs
StatePublished - Jan 1 1981

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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