Confined phonons in Si nanowires

K. W. Adu, H. R. Gutiérrez, U. J. Kim, G. U. Sumanasekera, P. C. Eklund

Research output: Contribution to journalArticlepeer-review

136 Scopus citations

Abstract

Raman microprobe studies of long crystalline Si nanowires reveal for the first time the evolution of phonon confinement with wire diameter. The Raman band at ∼520 cm -1 in bulk Si is found to downshift and asymmetrically broaden to lower frequency with decreasing wire diameter D̄, in good agreement with a phenomenological model first proposed by Richter et al. An adjustable parameter (a) is added to the theory that defines the width of the Gaussian phonon confinement function. We find that this parameter is not sensitive to diameter over the range 4-25 nm.

Original languageEnglish (US)
Pages (from-to)409-414
Number of pages6
JournalNano letters
Volume5
Issue number3
DOIs
StatePublished - Mar 1 2005

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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