Confinement in silicon nanowires: Optical properties

S. Bhattacharya, D. Banerjee, K. W. Adu, S. Samui, Somnath Bhattacharyya

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

The blueshift of the optical absorption edge along with the intense red photoluminescence (PL) peak from micron-long crystalline silicon nanowires (SiNW) prepared by pulsed-laser vaporization of heated Si targets were analyzed. A Perkin-Elmer Lambda 40 spectrophotometer was used to perform optical absorption of the SiNWs samples deposited on a fused quartz plate. It was observed that from the fit of optical absorption there is an upshift of band edge and the shift is different for indirect and direct bands of SiNWs. It was found that the shape of the band and PL peak strongly depends on the diameter distribution.

Original languageEnglish (US)
Pages (from-to)2008-2010
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number11
DOIs
StatePublished - Sep 13 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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