AlxGa1-xN films grown by MOCVD on sapphire and SiC substrates have been investigated by spatially resolved confocal photoluminescence microscopy and cathodoluminescence spectroscopy and mapping. The sample on SiC has a rougher topography, but it is much more uniform in emission intensity and wavelength than the sample on sapphire.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering