Confocal photoluminescence and cathodoluminescence studies of AlGaN

V. Dierolf, O. Svitelskiy, G. S. Cargill, A. Yu Nikiforov, J. Redwing, J. Acord

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

AlxGa1-xN films grown by MOCVD on sapphire and SiC substrates have been investigated by spatially resolved confocal photoluminescence microscopy and cathodoluminescence spectroscopy and mapping. The sample on SiC has a rougher topography, but it is much more uniform in emission intensity and wavelength than the sample on sapphire.

Original languageEnglish (US)
Pages (from-to)677-682
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume798
DOIs
StatePublished - Jan 1 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: Dec 1 2003Dec 5 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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