Conformational Domain Wall Switch

Pankaj Sharma, Daniel Sando, Qi Zhang, Xiaoxing Cheng, Sergey Prosandeev, Ralph Bulanadi, Sergei Prokhorenko, Laurent Bellaiche, Long Qing Chen, Valanoor Nagarajan, Jan Seidel

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Domain walls in ferroelectric materials have tantalizing potential in disruptive memory and reconfigurable nanoelectronics technologies. Here, a ferroelectric domain wall switch with three distinct addressable resistance states is demonstrated. The device operation hinges on fully controllable and reversible conformational changes of the domain wall. As validated by atomistic simulations consistent with the experiments, using electric field, the shape—and hence the charge state—of the domain wall and ultimately its conduction are altered. Sequential nanoscale transitions of the walls are visualized directly using stroboscopic-piezoresponse force microscopy and Kelvin probe microscopy. Anisotropic head-to-head domain wall injection, stabilized by the majority carrier type of the ferroelectric, BiFeO 3 , is identified as the key factor that enables conformational control.

Original languageEnglish (US)
Article number1807523
JournalAdvanced Functional Materials
Volume29
Issue number18
DOIs
StatePublished - May 2 2019

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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