Abstract
Domain walls in ferroelectric materials have tantalizing potential in disruptive memory and reconfigurable nanoelectronics technologies. Here, a ferroelectric domain wall switch with three distinct addressable resistance states is demonstrated. The device operation hinges on fully controllable and reversible conformational changes of the domain wall. As validated by atomistic simulations consistent with the experiments, using electric field, the shape—and hence the charge state—of the domain wall and ultimately its conduction are altered. Sequential nanoscale transitions of the walls are visualized directly using stroboscopic-piezoresponse force microscopy and Kelvin probe microscopy. Anisotropic head-to-head domain wall injection, stabilized by the majority carrier type of the ferroelectric, BiFeO 3 , is identified as the key factor that enables conformational control.
| Original language | English (US) |
|---|---|
| Article number | 1807523 |
| Journal | Advanced Functional Materials |
| Volume | 29 |
| Issue number | 18 |
| DOIs | |
| State | Published - May 2 2019 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Electrochemistry
Cite this
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Conformational Domain Wall Switch. / Sharma, Pankaj; Sando, Daniel; Zhang, Qi; Cheng, Xiaoxing; Prosandeev, Sergey; Bulanadi, Ralph; Prokhorenko, Sergei; Bellaiche, Laurent; Chen, Long-qing; Nagarajan, Valanoor; Seidel, Jan.
In: Advanced Functional Materials, Vol. 29, No. 18, 1807523, 02.05.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Conformational Domain Wall Switch
AU - Sharma, Pankaj
AU - Sando, Daniel
AU - Zhang, Qi
AU - Cheng, Xiaoxing
AU - Prosandeev, Sergey
AU - Bulanadi, Ralph
AU - Prokhorenko, Sergei
AU - Bellaiche, Laurent
AU - Chen, Long-qing
AU - Nagarajan, Valanoor
AU - Seidel, Jan
PY - 2019/5/2
Y1 - 2019/5/2
N2 - Domain walls in ferroelectric materials have tantalizing potential in disruptive memory and reconfigurable nanoelectronics technologies. Here, a ferroelectric domain wall switch with three distinct addressable resistance states is demonstrated. The device operation hinges on fully controllable and reversible conformational changes of the domain wall. As validated by atomistic simulations consistent with the experiments, using electric field, the shape—and hence the charge state—of the domain wall and ultimately its conduction are altered. Sequential nanoscale transitions of the walls are visualized directly using stroboscopic-piezoresponse force microscopy and Kelvin probe microscopy. Anisotropic head-to-head domain wall injection, stabilized by the majority carrier type of the ferroelectric, BiFeO 3 , is identified as the key factor that enables conformational control.
AB - Domain walls in ferroelectric materials have tantalizing potential in disruptive memory and reconfigurable nanoelectronics technologies. Here, a ferroelectric domain wall switch with three distinct addressable resistance states is demonstrated. The device operation hinges on fully controllable and reversible conformational changes of the domain wall. As validated by atomistic simulations consistent with the experiments, using electric field, the shape—and hence the charge state—of the domain wall and ultimately its conduction are altered. Sequential nanoscale transitions of the walls are visualized directly using stroboscopic-piezoresponse force microscopy and Kelvin probe microscopy. Anisotropic head-to-head domain wall injection, stabilized by the majority carrier type of the ferroelectric, BiFeO 3 , is identified as the key factor that enables conformational control.
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U2 - 10.1002/adfm.201807523
DO - 10.1002/adfm.201807523
M3 - Article
VL - 29
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 18
M1 - 1807523
ER -