Conformational Domain Wall Switch

Pankaj Sharma, Daniel Sando, Qi Zhang, Xiaoxing Cheng, Sergey Prosandeev, Ralph Bulanadi, Sergei Prokhorenko, Laurent Bellaiche, Long-qing Chen, Valanoor Nagarajan, Jan Seidel

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Domain walls in ferroelectric materials have tantalizing potential in disruptive memory and reconfigurable nanoelectronics technologies. Here, a ferroelectric domain wall switch with three distinct addressable resistance states is demonstrated. The device operation hinges on fully controllable and reversible conformational changes of the domain wall. As validated by atomistic simulations consistent with the experiments, using electric field, the shape—and hence the charge state—of the domain wall and ultimately its conduction are altered. Sequential nanoscale transitions of the walls are visualized directly using stroboscopic-piezoresponse force microscopy and Kelvin probe microscopy. Anisotropic head-to-head domain wall injection, stabilized by the majority carrier type of the ferroelectric, BiFeO 3 , is identified as the key factor that enables conformational control.

Original languageEnglish (US)
Article number1807523
JournalAdvanced Functional Materials
Volume29
Issue number18
DOIs
StatePublished - May 2 2019

Fingerprint

Domain walls
domain wall
switches
Switches
Ferroelectric materials
Microscopic examination
microscopy
majority carriers
Nanoelectronics
ferroelectric materials
hinges
Hinges
Electric fields
injection
Data storage equipment
conduction
electric fields
probes
simulation
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Sharma, P., Sando, D., Zhang, Q., Cheng, X., Prosandeev, S., Bulanadi, R., ... Seidel, J. (2019). Conformational Domain Wall Switch. Advanced Functional Materials, 29(18), [1807523]. https://doi.org/10.1002/adfm.201807523
Sharma, Pankaj ; Sando, Daniel ; Zhang, Qi ; Cheng, Xiaoxing ; Prosandeev, Sergey ; Bulanadi, Ralph ; Prokhorenko, Sergei ; Bellaiche, Laurent ; Chen, Long-qing ; Nagarajan, Valanoor ; Seidel, Jan. / Conformational Domain Wall Switch. In: Advanced Functional Materials. 2019 ; Vol. 29, No. 18.
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Sharma, P, Sando, D, Zhang, Q, Cheng, X, Prosandeev, S, Bulanadi, R, Prokhorenko, S, Bellaiche, L, Chen, L, Nagarajan, V & Seidel, J 2019, 'Conformational Domain Wall Switch', Advanced Functional Materials, vol. 29, no. 18, 1807523. https://doi.org/10.1002/adfm.201807523

Conformational Domain Wall Switch. / Sharma, Pankaj; Sando, Daniel; Zhang, Qi; Cheng, Xiaoxing; Prosandeev, Sergey; Bulanadi, Ralph; Prokhorenko, Sergei; Bellaiche, Laurent; Chen, Long-qing; Nagarajan, Valanoor; Seidel, Jan.

In: Advanced Functional Materials, Vol. 29, No. 18, 1807523, 02.05.2019.

Research output: Contribution to journalArticle

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AU - Sharma, Pankaj

AU - Sando, Daniel

AU - Zhang, Qi

AU - Cheng, Xiaoxing

AU - Prosandeev, Sergey

AU - Bulanadi, Ralph

AU - Prokhorenko, Sergei

AU - Bellaiche, Laurent

AU - Chen, Long-qing

AU - Nagarajan, Valanoor

AU - Seidel, Jan

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Sharma P, Sando D, Zhang Q, Cheng X, Prosandeev S, Bulanadi R et al. Conformational Domain Wall Switch. Advanced Functional Materials. 2019 May 2;29(18). 1807523. https://doi.org/10.1002/adfm.201807523