Contact resistance in organic thin film transistors

H. Klauk, G. Schmid, Lisong Zhou, Chris D. Sheraw, Jiunn Ru Huang, Jonathan A. Nichols, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We present an analysis of the electrical characteristics of pentacene OTFTs fabricated on flexible polyethylene naphthalate (PEN) film. Nickel, silicon dioxide, and palladium were deposited by ion-beam sputtering and patterned by photolithography and lift-off to form the gate electrodes, the gate dielectric layer, and the source and drain contacts, respectively. An octadecyltrichlorosilane vapor prime was used to prepare the SiO2 gate dielectric surface for the deposition of the pentacene layer, which was deposited by thermal evaporation and patterned using a water-soluble, photo-patterned polyvinyl alcohol layer.

Original languageEnglish (US)
Title of host publication2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages349-352
Number of pages4
ISBN (Electronic)0780374320, 9780780374324
DOIs
StatePublished - Jan 1 2001
EventInternational Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States
Duration: Dec 5 2001Dec 7 2001

Publication series

Name2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2001
CountryUnited States
CityWashington
Period12/5/0112/7/01

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Klauk, H., Schmid, G., Zhou, L., Sheraw, C. D., Huang, J. R., Nichols, J. A., & Jackson, T. N. (2001). Contact resistance in organic thin film transistors. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings (pp. 349-352). [984513] (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2001.984513