Contact resistance in organic thin film transistors

Hagen Klauk, Günter Schmid, Wolfgang Radlik, Werner Weber, Lisong Zhou, Chris D. Sheraw, Jonathan A. Nichols, Thomas N. Jackson

Research output: Contribution to journalArticle

309 Scopus citations

Abstract

We have fabricated pentacene organic thin film transistors (TFTs) on flexible polyester substrates with good yield and uniformity. These transistors have excellent electrical characteristics, with carrier field-effect mobility as large as 0.9 cm2/Vs, on/off current ratio of 106, subthreshold slope of 1 V/decade, and near-zero threshold voltage. We have applied a simple model to estimate the resistance of the source and drain contacts in these transistors and found that the contact resistance is typically greater than the channel resistance. This suggests that the electrical performance of organic TFTs, in which reliable contact doping is difficult, may be dictated by the contacts, rather than by the intrinsic carrier mobility of the organic semiconductor.

Original languageEnglish (US)
Pages (from-to)297-301
Number of pages5
JournalSolid-State Electronics
Volume47
Issue number2
DOIs
StatePublished - Feb 1 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Klauk, H., Schmid, G., Radlik, W., Weber, W., Zhou, L., Sheraw, C. D., Nichols, J. A., & Jackson, T. N. (2003). Contact resistance in organic thin film transistors. Solid-State Electronics, 47(2), 297-301. https://doi.org/10.1016/S0038-1101(02)00210-1