Contact resistance in pentacene thin film transistors

P. V. Necliudov, M. S. Shur, D. J. Gundlach, T. N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We present results of the contact resistance extraction for Pd and Au top-contact and Pd bottom-contact pentacene TFTs. The extracted gold TFT contact resistance depends on the gate-source voltage VGS, but shows no dependence on drain-source voltage VDS. The TFT channel resistance is comparable to or exceeds the contact resistance at L < 10 μm. Therefore, L < 10 μm Au TFT performance can be limited by the contacts instead of the channel. We propose a circuit simulating the bottom-contact TFT contact resistance, which is drain bias dependent. We verified the circuit applicability by extracting and comparing the TFT channel resistances at |VDS| = 0.1 V and in the "linear" regime of TFT operation. The circuit allowed us to extract the physically meaningful Pd bottom-contact TFT resistance values and Pd top-contact TFT gate-voltage dependent Rs. Despite higher initial series resistance Rs for the Pd-contact TFTs, the series resistance in the "linear" region of the TFT operation is much smaller and only several times larger that the gold top-contact TFT series resistance.

Original languageEnglish (US)
Title of host publication2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages345-348
Number of pages4
ISBN (Electronic)0780374320, 9780780374324
DOIs
StatePublished - Jan 1 2001
EventInternational Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States
Duration: Dec 5 2001Dec 7 2001

Publication series

Name2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2001
CountryUnited States
CityWashington
Period12/5/0112/7/01

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Necliudov, P. V., Shur, M. S., Gundlach, D. J., & Jackson, T. N. (2001). Contact resistance in pentacene thin film transistors. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings (pp. 345-348). [984512] (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2001.984512