Contacting graphene

Joshua A. Robinson, Michael Labella, Mike Zhu, Matt Hollander, Richard Kasarda, Zachary Hughes, Kathleen Trumbull, Randal Cavalero, David Snyder

Research output: Contribution to journalArticle

261 Scopus citations

Abstract

We present a robust method for forming high quality ohmic contacts to graphene, which improves the contact resistance by nearly 6000 times compared to untreated metal/graphene interfaces. The optimal specific contact resistance for treated Ti/Au contacts is found to average < 10-7 cm2. Additionally, we examine Al/Au, Ti/Au, Ni/Au, Cu/Au, Pt/Au, and Pd/Au contact metallizations and find that most metallizations result in similar specific contact resistances in this work regardless of the work function difference between graphene and the metal overlayer. The results presented in this work serve as a foundation for achieving ultralow resistance ohmic contacts to graphene for high speed electronic and optoelectronic applications.

Original languageEnglish (US)
Article number053103
JournalApplied Physics Letters
Volume98
Issue number5
DOIs
StatePublished - Jan 31 2011

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Robinson, J. A., Labella, M., Zhu, M., Hollander, M., Kasarda, R., Hughes, Z., Trumbull, K., Cavalero, R., & Snyder, D. (2011). Contacting graphene. Applied Physics Letters, 98(5), [053103]. https://doi.org/10.1063/1.3549183