Contacts to high aluminum fraction p-type aluminum gallium nitride

Brett A. Hull, Suzanne E. Mohney, Uttiya Chowdhury, Russell D. Dupuis, David Gotthold, Ronald Birkhahn, Milan Pophristic

Research output: Contribution to journalConference article

Abstract

Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type AlxGa1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with ρc = 1.8 (±1.1) × 10-3 Ωcm2, but only following annealing at 850°C. For the Pd, Au, and Pt contacts annealed at greater than 700°C, a rapid degradation in the current-voltage curves was observed upon testing. The degradation was induced by exposure to sub-bandgap light and was reversed with a mild anneal at 500°C. Possible mechanisms for the degradation are discussed.

Original languageEnglish (US)
Pages (from-to)833-838
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume743
StatePublished - Dec 1 2002
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: Dec 2 2002Dec 6 2002

Fingerprint

Aluminum gallium nitride
gallium nitrides
aluminum nitrides
Aluminum
electric contacts
degradation
aluminum
Degradation
Ohmic contacts
Palladium
Platinum
Nickel
Gold
palladium
Energy gap
platinum
nickel
Annealing
gold
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hull, B. A., Mohney, S. E., Chowdhury, U., Dupuis, R. D., Gotthold, D., Birkhahn, R., & Pophristic, M. (2002). Contacts to high aluminum fraction p-type aluminum gallium nitride. Materials Research Society Symposium - Proceedings, 743, 833-838.
Hull, Brett A. ; Mohney, Suzanne E. ; Chowdhury, Uttiya ; Dupuis, Russell D. ; Gotthold, David ; Birkhahn, Ronald ; Pophristic, Milan. / Contacts to high aluminum fraction p-type aluminum gallium nitride. In: Materials Research Society Symposium - Proceedings. 2002 ; Vol. 743. pp. 833-838.
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abstract = "Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type AlxGa1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with ρc = 1.8 (±1.1) × 10-3 Ωcm2, but only following annealing at 850°C. For the Pd, Au, and Pt contacts annealed at greater than 700°C, a rapid degradation in the current-voltage curves was observed upon testing. The degradation was induced by exposure to sub-bandgap light and was reversed with a mild anneal at 500°C. Possible mechanisms for the degradation are discussed.",
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Hull, BA, Mohney, SE, Chowdhury, U, Dupuis, RD, Gotthold, D, Birkhahn, R & Pophristic, M 2002, 'Contacts to high aluminum fraction p-type aluminum gallium nitride', Materials Research Society Symposium - Proceedings, vol. 743, pp. 833-838.

Contacts to high aluminum fraction p-type aluminum gallium nitride. / Hull, Brett A.; Mohney, Suzanne E.; Chowdhury, Uttiya; Dupuis, Russell D.; Gotthold, David; Birkhahn, Ronald; Pophristic, Milan.

In: Materials Research Society Symposium - Proceedings, Vol. 743, 01.12.2002, p. 833-838.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Contacts to high aluminum fraction p-type aluminum gallium nitride

AU - Hull, Brett A.

AU - Mohney, Suzanne E.

AU - Chowdhury, Uttiya

AU - Dupuis, Russell D.

AU - Gotthold, David

AU - Birkhahn, Ronald

AU - Pophristic, Milan

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type AlxGa1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with ρc = 1.8 (±1.1) × 10-3 Ωcm2, but only following annealing at 850°C. For the Pd, Au, and Pt contacts annealed at greater than 700°C, a rapid degradation in the current-voltage curves was observed upon testing. The degradation was induced by exposure to sub-bandgap light and was reversed with a mild anneal at 500°C. Possible mechanisms for the degradation are discussed.

AB - Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type AlxGa1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with ρc = 1.8 (±1.1) × 10-3 Ωcm2, but only following annealing at 850°C. For the Pd, Au, and Pt contacts annealed at greater than 700°C, a rapid degradation in the current-voltage curves was observed upon testing. The degradation was induced by exposure to sub-bandgap light and was reversed with a mild anneal at 500°C. Possible mechanisms for the degradation are discussed.

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Hull BA, Mohney SE, Chowdhury U, Dupuis RD, Gotthold D, Birkhahn R et al. Contacts to high aluminum fraction p-type aluminum gallium nitride. Materials Research Society Symposium - Proceedings. 2002 Dec 1;743:833-838.