Contacts to high aluminum fraction p-type aluminum gallium nitride

Brett A. Hull, Suzanne E. Mohney, Uttiya Chowdhury, Russell D. Dupuis, David Gotthold, Ronald Birkhahn, Milan Pophristic

Research output: Contribution to journalConference article

Abstract

Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type AlxGa1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with ρc = 1.8 (±1.1) × 10-3 Ωcm2, but only following annealing at 850°C. For the Pd, Au, and Pt contacts annealed at greater than 700°C, a rapid degradation in the current-voltage curves was observed upon testing. The degradation was induced by exposure to sub-bandgap light and was reversed with a mild anneal at 500°C. Possible mechanisms for the degradation are discussed.

Original languageEnglish (US)
Pages (from-to)833-838
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume743
DOIs
StatePublished - Jan 1 2002
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: Dec 2 2002Dec 6 2002

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hull, B. A., Mohney, S. E., Chowdhury, U., Dupuis, R. D., Gotthold, D., Birkhahn, R., & Pophristic, M. (2002). Contacts to high aluminum fraction p-type aluminum gallium nitride. Materials Research Society Symposium - Proceedings, 743, 833-838. https://doi.org/10.1557/proc-743-l12.2