Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition

C. Muratore, J. J. Hu, B. Wang, Md Amanul Haque, J. E. Bultman, M. L. Jespersen, P. J. Shamberger, M. E. McConney, R. D. Naguy, A. A. Voevodin

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.

Original languageEnglish (US)
Article number261604
JournalApplied Physics Letters
Volume104
Issue number26
DOIs
StatePublished - 2014

Fingerprint

vapor deposition
thin films
synthesis
electronics
ultrahigh vacuum
graphite
physical properties
vapor phases
silicon dioxide
optical properties

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Muratore, C., Hu, J. J., Wang, B., Haque, M. A., Bultman, J. E., Jespersen, M. L., ... Voevodin, A. A. (2014). Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition. Applied Physics Letters, 104(26), [261604]. https://doi.org/10.1063/1.4885391
Muratore, C. ; Hu, J. J. ; Wang, B. ; Haque, Md Amanul ; Bultman, J. E. ; Jespersen, M. L. ; Shamberger, P. J. ; McConney, M. E. ; Naguy, R. D. ; Voevodin, A. A. / Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition. In: Applied Physics Letters. 2014 ; Vol. 104, No. 26.
@article{0a38049c3c7f4c228ee5098aaee16cfb,
title = "Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition",
abstract = "Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.",
author = "C. Muratore and Hu, {J. J.} and B. Wang and Haque, {Md Amanul} and Bultman, {J. E.} and Jespersen, {M. L.} and Shamberger, {P. J.} and McConney, {M. E.} and Naguy, {R. D.} and Voevodin, {A. A.}",
year = "2014",
doi = "10.1063/1.4885391",
language = "English (US)",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",

}

Muratore, C, Hu, JJ, Wang, B, Haque, MA, Bultman, JE, Jespersen, ML, Shamberger, PJ, McConney, ME, Naguy, RD & Voevodin, AA 2014, 'Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition', Applied Physics Letters, vol. 104, no. 26, 261604. https://doi.org/10.1063/1.4885391

Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition. / Muratore, C.; Hu, J. J.; Wang, B.; Haque, Md Amanul; Bultman, J. E.; Jespersen, M. L.; Shamberger, P. J.; McConney, M. E.; Naguy, R. D.; Voevodin, A. A.

In: Applied Physics Letters, Vol. 104, No. 26, 261604, 2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition

AU - Muratore, C.

AU - Hu, J. J.

AU - Wang, B.

AU - Haque, Md Amanul

AU - Bultman, J. E.

AU - Jespersen, M. L.

AU - Shamberger, P. J.

AU - McConney, M. E.

AU - Naguy, R. D.

AU - Voevodin, A. A.

PY - 2014

Y1 - 2014

N2 - Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.

AB - Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.

UR - http://www.scopus.com/inward/record.url?scp=84905643368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905643368&partnerID=8YFLogxK

U2 - 10.1063/1.4885391

DO - 10.1063/1.4885391

M3 - Article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 261604

ER -