Control of growth direction of epitaxial YBaCuO thin films on SrTiO3-substrates

G. Linker, X. X. Xi, O. Meyer, Qi Li, J. Geerk

Research output: Contribution to journalArticle

89 Citations (Scopus)

Abstract

The growth of YBaCuO thin films deposited by hollow magnetron sputtering on (100) and (110) SrTiO3 substrates has been studied as a function of deposition temperature, Ts. Besides the substrate orientation Ts is the parameter determining the growth direction. On (110) substrates films grow either in the (110) or in the mixed (110)/(013) direction. On (100) substrates c-axis orientation is observed at elevated temperatures (Ts ≈ 780-830°C) while a-axis orientation occurs at lower temperatures (Ts < 720°C). Deviations from oxygen stoichiometry are thought to be the intrinsic parameter controlling the growth.

Original languageEnglish (US)
Pages (from-to)249-253
Number of pages5
JournalSolid State Communications
Volume69
Issue number3
DOIs
StatePublished - Jan 1 1989

Fingerprint

Epitaxial films
Thin films
Substrates
thin films
Stoichiometry
Magnetron sputtering
Temperature
stoichiometry
hollow
magnetron sputtering
Oxygen
deviation
temperature
strontium titanium oxide
Direction compound
oxygen

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Linker, G. ; Xi, X. X. ; Meyer, O. ; Li, Qi ; Geerk, J. / Control of growth direction of epitaxial YBaCuO thin films on SrTiO3-substrates. In: Solid State Communications. 1989 ; Vol. 69, No. 3. pp. 249-253.
@article{cece45dbb0b840999740c43d99eb71a6,
title = "Control of growth direction of epitaxial YBaCuO thin films on SrTiO3-substrates",
abstract = "The growth of YBaCuO thin films deposited by hollow magnetron sputtering on (100) and (110) SrTiO3 substrates has been studied as a function of deposition temperature, Ts. Besides the substrate orientation Ts is the parameter determining the growth direction. On (110) substrates films grow either in the (110) or in the mixed (110)/(013) direction. On (100) substrates c-axis orientation is observed at elevated temperatures (Ts ≈ 780-830°C) while a-axis orientation occurs at lower temperatures (Ts < 720°C). Deviations from oxygen stoichiometry are thought to be the intrinsic parameter controlling the growth.",
author = "G. Linker and Xi, {X. X.} and O. Meyer and Qi Li and J. Geerk",
year = "1989",
month = "1",
day = "1",
doi = "10.1016/0038-1098(89)90844-2",
language = "English (US)",
volume = "69",
pages = "249--253",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "3",

}

Control of growth direction of epitaxial YBaCuO thin films on SrTiO3-substrates. / Linker, G.; Xi, X. X.; Meyer, O.; Li, Qi; Geerk, J.

In: Solid State Communications, Vol. 69, No. 3, 01.01.1989, p. 249-253.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Control of growth direction of epitaxial YBaCuO thin films on SrTiO3-substrates

AU - Linker, G.

AU - Xi, X. X.

AU - Meyer, O.

AU - Li, Qi

AU - Geerk, J.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - The growth of YBaCuO thin films deposited by hollow magnetron sputtering on (100) and (110) SrTiO3 substrates has been studied as a function of deposition temperature, Ts. Besides the substrate orientation Ts is the parameter determining the growth direction. On (110) substrates films grow either in the (110) or in the mixed (110)/(013) direction. On (100) substrates c-axis orientation is observed at elevated temperatures (Ts ≈ 780-830°C) while a-axis orientation occurs at lower temperatures (Ts < 720°C). Deviations from oxygen stoichiometry are thought to be the intrinsic parameter controlling the growth.

AB - The growth of YBaCuO thin films deposited by hollow magnetron sputtering on (100) and (110) SrTiO3 substrates has been studied as a function of deposition temperature, Ts. Besides the substrate orientation Ts is the parameter determining the growth direction. On (110) substrates films grow either in the (110) or in the mixed (110)/(013) direction. On (100) substrates c-axis orientation is observed at elevated temperatures (Ts ≈ 780-830°C) while a-axis orientation occurs at lower temperatures (Ts < 720°C). Deviations from oxygen stoichiometry are thought to be the intrinsic parameter controlling the growth.

UR - http://www.scopus.com/inward/record.url?scp=0024481440&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024481440&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(89)90844-2

DO - 10.1016/0038-1098(89)90844-2

M3 - Article

AN - SCOPUS:0024481440

VL - 69

SP - 249

EP - 253

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 3

ER -