Control of intrinsic defects and magnetotransport properties of Bi2Se3/c-sapphire epitaxial heterostructures

Y. F. Lee, R. Kumar, F. Hunte, J. Narayan, Justin Schwartz

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have synthesised Bi2Se3 epitaxial thin films on c-sapphire substrates, where Se-related defects and strains are controlled precisely during pulsed laser deposition. This allows us to tune electrical and magnetotransport properties and probe the role of defects and strains as a function of processing conditions systematically. The defect microstructure has been studied in detail using high resolution X-ray diffraction and high-angle annular dark field scanning transmission electron microscopy. Magnetotransport measurements show a strong dependence on microstructure which is associated with the Se-content. With higher Se content, the film experiences large compressive strain along the [0 0 1] direction which is accompanied by the partial suppression of one family of twin domain formation. As a result, the insulating behavior becomes more pronounced at a low temperature which is understood in terms of the quantum correlation induced by electron-electron interactions. The compressive strain enhances spin-orbit coupling and topological characteristics. These results shed light on the importance of controlling the intrinsic defects during the growth of Bi2Se3 thin films, providing an effective way to suppress the bulk conductivity and establish the correlation between microstructure and strain.

Original languageEnglish (US)
Pages (from-to)57-64
Number of pages8
JournalActa Materialia
Volume95
DOIs
StatePublished - Jun 2 2015

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Galvanomagnetic effects
Aluminum Oxide
Sapphire
Heterojunctions
Defects
Microstructure
Electron-electron interactions
Thin films
Epitaxial films
Pulsed laser deposition
Orbits
Transmission electron microscopy
X ray diffraction
Scanning electron microscopy
Substrates
Processing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

Cite this

@article{8a194627141a442a9d2588c3278a4fce,
title = "Control of intrinsic defects and magnetotransport properties of Bi2Se3/c-sapphire epitaxial heterostructures",
abstract = "We have synthesised Bi2Se3 epitaxial thin films on c-sapphire substrates, where Se-related defects and strains are controlled precisely during pulsed laser deposition. This allows us to tune electrical and magnetotransport properties and probe the role of defects and strains as a function of processing conditions systematically. The defect microstructure has been studied in detail using high resolution X-ray diffraction and high-angle annular dark field scanning transmission electron microscopy. Magnetotransport measurements show a strong dependence on microstructure which is associated with the Se-content. With higher Se content, the film experiences large compressive strain along the [0 0 1] direction which is accompanied by the partial suppression of one family of twin domain formation. As a result, the insulating behavior becomes more pronounced at a low temperature which is understood in terms of the quantum correlation induced by electron-electron interactions. The compressive strain enhances spin-orbit coupling and topological characteristics. These results shed light on the importance of controlling the intrinsic defects during the growth of Bi2Se3 thin films, providing an effective way to suppress the bulk conductivity and establish the correlation between microstructure and strain.",
author = "Lee, {Y. F.} and R. Kumar and F. Hunte and J. Narayan and Justin Schwartz",
year = "2015",
month = "6",
day = "2",
doi = "10.1016/j.actamat.2015.05.009",
language = "English (US)",
volume = "95",
pages = "57--64",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier Limited",

}

Control of intrinsic defects and magnetotransport properties of Bi2Se3/c-sapphire epitaxial heterostructures. / Lee, Y. F.; Kumar, R.; Hunte, F.; Narayan, J.; Schwartz, Justin.

In: Acta Materialia, Vol. 95, 02.06.2015, p. 57-64.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Control of intrinsic defects and magnetotransport properties of Bi2Se3/c-sapphire epitaxial heterostructures

AU - Lee, Y. F.

AU - Kumar, R.

AU - Hunte, F.

AU - Narayan, J.

AU - Schwartz, Justin

PY - 2015/6/2

Y1 - 2015/6/2

N2 - We have synthesised Bi2Se3 epitaxial thin films on c-sapphire substrates, where Se-related defects and strains are controlled precisely during pulsed laser deposition. This allows us to tune electrical and magnetotransport properties and probe the role of defects and strains as a function of processing conditions systematically. The defect microstructure has been studied in detail using high resolution X-ray diffraction and high-angle annular dark field scanning transmission electron microscopy. Magnetotransport measurements show a strong dependence on microstructure which is associated with the Se-content. With higher Se content, the film experiences large compressive strain along the [0 0 1] direction which is accompanied by the partial suppression of one family of twin domain formation. As a result, the insulating behavior becomes more pronounced at a low temperature which is understood in terms of the quantum correlation induced by electron-electron interactions. The compressive strain enhances spin-orbit coupling and topological characteristics. These results shed light on the importance of controlling the intrinsic defects during the growth of Bi2Se3 thin films, providing an effective way to suppress the bulk conductivity and establish the correlation between microstructure and strain.

AB - We have synthesised Bi2Se3 epitaxial thin films on c-sapphire substrates, where Se-related defects and strains are controlled precisely during pulsed laser deposition. This allows us to tune electrical and magnetotransport properties and probe the role of defects and strains as a function of processing conditions systematically. The defect microstructure has been studied in detail using high resolution X-ray diffraction and high-angle annular dark field scanning transmission electron microscopy. Magnetotransport measurements show a strong dependence on microstructure which is associated with the Se-content. With higher Se content, the film experiences large compressive strain along the [0 0 1] direction which is accompanied by the partial suppression of one family of twin domain formation. As a result, the insulating behavior becomes more pronounced at a low temperature which is understood in terms of the quantum correlation induced by electron-electron interactions. The compressive strain enhances spin-orbit coupling and topological characteristics. These results shed light on the importance of controlling the intrinsic defects during the growth of Bi2Se3 thin films, providing an effective way to suppress the bulk conductivity and establish the correlation between microstructure and strain.

UR - http://www.scopus.com/inward/record.url?scp=84930199121&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930199121&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2015.05.009

DO - 10.1016/j.actamat.2015.05.009

M3 - Article

AN - SCOPUS:84930199121

VL - 95

SP - 57

EP - 64

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

ER -