Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films: Nucleation of "quantum fortresses"

Jennifer L. Gray, Robert Hull, Jerrold A. Floro

Research output: Contribution to journalArticle

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Abstract

The surface morphology of Si0.7Ge0.3 films grown at 550°C by molecular-beam epitaxy is found to be highly controllable through changes in growth rate. A growth rate of 0.9 Å/s results in a surface morphology that begins as shallow pyramidal pits, which then become decorated by ordered quadruplets of islands that surround the edges of the pits. This "quantum fortress" structure represents a symmetry with potential application to quantum cellular automata geometries. A higher growth rate of 3 Å/s produces similar results. However, when the growth rate is reduced to 0.15 Å/s, the surface morphology that develops instead consists of elongated ridges.

Original languageEnglish (US)
Pages (from-to)2445-2447
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number13
DOIs
StatePublished - Sep 23 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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