Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films

Nucleation of "quantum fortresses"

Jennifer Lynn Gray, Robert Hull, Jerrold A. Floro

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

The surface morphology of Si0.7Ge0.3 films grown at 550°C by molecular-beam epitaxy is found to be highly controllable through changes in growth rate. A growth rate of 0.9 Å/s results in a surface morphology that begins as shallow pyramidal pits, which then become decorated by ordered quadruplets of islands that surround the edges of the pits. This "quantum fortress" structure represents a symmetry with potential application to quantum cellular automata geometries. A higher growth rate of 3 Å/s produces similar results. However, when the growth rate is reduced to 0.15 Å/s, the surface morphology that develops instead consists of elongated ridges.

Original languageEnglish (US)
Pages (from-to)2445-2447
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number13
DOIs
StatePublished - Sep 23 2002

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nucleation
cellular automata
ridges
molecular beam epitaxy
symmetry
geometry

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{ec38725a899547bb88a729714ffb98aa,
title = "Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films: Nucleation of {"}quantum fortresses{"}",
abstract = "The surface morphology of Si0.7Ge0.3 films grown at 550°C by molecular-beam epitaxy is found to be highly controllable through changes in growth rate. A growth rate of 0.9 {\AA}/s results in a surface morphology that begins as shallow pyramidal pits, which then become decorated by ordered quadruplets of islands that surround the edges of the pits. This {"}quantum fortress{"} structure represents a symmetry with potential application to quantum cellular automata geometries. A higher growth rate of 3 {\AA}/s produces similar results. However, when the growth rate is reduced to 0.15 {\AA}/s, the surface morphology that develops instead consists of elongated ridges.",
author = "Gray, {Jennifer Lynn} and Robert Hull and Floro, {Jerrold A.}",
year = "2002",
month = "9",
day = "23",
doi = "10.1063/1.1509094",
language = "English (US)",
volume = "81",
pages = "2445--2447",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films : Nucleation of "quantum fortresses". / Gray, Jennifer Lynn; Hull, Robert; Floro, Jerrold A.

In: Applied Physics Letters, Vol. 81, No. 13, 23.09.2002, p. 2445-2447.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films

T2 - Nucleation of "quantum fortresses"

AU - Gray, Jennifer Lynn

AU - Hull, Robert

AU - Floro, Jerrold A.

PY - 2002/9/23

Y1 - 2002/9/23

N2 - The surface morphology of Si0.7Ge0.3 films grown at 550°C by molecular-beam epitaxy is found to be highly controllable through changes in growth rate. A growth rate of 0.9 Å/s results in a surface morphology that begins as shallow pyramidal pits, which then become decorated by ordered quadruplets of islands that surround the edges of the pits. This "quantum fortress" structure represents a symmetry with potential application to quantum cellular automata geometries. A higher growth rate of 3 Å/s produces similar results. However, when the growth rate is reduced to 0.15 Å/s, the surface morphology that develops instead consists of elongated ridges.

AB - The surface morphology of Si0.7Ge0.3 films grown at 550°C by molecular-beam epitaxy is found to be highly controllable through changes in growth rate. A growth rate of 0.9 Å/s results in a surface morphology that begins as shallow pyramidal pits, which then become decorated by ordered quadruplets of islands that surround the edges of the pits. This "quantum fortress" structure represents a symmetry with potential application to quantum cellular automata geometries. A higher growth rate of 3 Å/s produces similar results. However, when the growth rate is reduced to 0.15 Å/s, the surface morphology that develops instead consists of elongated ridges.

UR - http://www.scopus.com/inward/record.url?scp=79956057962&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956057962&partnerID=8YFLogxK

U2 - 10.1063/1.1509094

DO - 10.1063/1.1509094

M3 - Article

VL - 81

SP - 2445

EP - 2447

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -