Controlled growth and Atomic-scale Characterization of Two-dimensional hexagonal boron nitride crystals

Amin Azizi, Mohammed Abu AlSaud, Nasim Alem

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Two-dimensional (2D) hexagonal boron nitride (h-BN) is a fascinating material for variety of applications such as graphene-based devices, transparent/bendable electronics, and deep ultraviolet emitters. However, its technological applications are contingent upon tunable and scalable growth. Here, we demonstrate reproducible and tunable growth of high-quality h-BN crystals on Cu via chemical vapor deposition (CVD) through a precise control of the BN precursor's flow during growth. We present synthesis of both epitaxially-grown triangular flakes and large-area continuous films with tunable thickness ranging from monolayer to 11-layer thick. Using a combination of electron microscopy imaging, spectroscopy, and diffraction analysis, we thoroughly study morphology, thickness, chemistry, grain size, and atomic structure of the grown h-BN crystals. This study could pave the way for developing controlled and reproducible growth of high-quality h-BN crystals with tunable thickness and morphology.

Original languageEnglish (US)
Pages (from-to)51-56
Number of pages6
JournalJournal of Crystal Growth
Volume496-497
DOIs
StatePublished - Aug 1 2018

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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