Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

J. H. Chen, G. Autès, Nasim Alem, F. Gargiulo, A. Gautam, M. Linck, C. Kisielowski, O. V. Yazyev, S. G. Louie, A. Zettl

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.

Original languageEnglish (US)
Article number121407
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume89
Issue number12
DOIs
StatePublished - Mar 14 2014

Fingerprint

Graphite
Graphene
valleys
graphene
Defects
defects
Joule heating
Electron irradiation
Electric currents
electron irradiation
High resolution transmission electron microscopy
Charge carriers
electric current
charge carriers
Polarization
transmission electron microscopy
heating
high resolution
polarization
energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Chen, J. H. ; Autès, G. ; Alem, Nasim ; Gargiulo, F. ; Gautam, A. ; Linck, M. ; Kisielowski, C. ; Yazyev, O. V. ; Louie, S. G. ; Zettl, A. / Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering. In: Physical Review B - Condensed Matter and Materials Physics. 2014 ; Vol. 89, No. 12.
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Chen, JH, Autès, G, Alem, N, Gargiulo, F, Gautam, A, Linck, M, Kisielowski, C, Yazyev, OV, Louie, SG & Zettl, A 2014, 'Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering', Physical Review B - Condensed Matter and Materials Physics, vol. 89, no. 12, 121407. https://doi.org/10.1103/PhysRevB.89.121407

Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering. / Chen, J. H.; Autès, G.; Alem, Nasim; Gargiulo, F.; Gautam, A.; Linck, M.; Kisielowski, C.; Yazyev, O. V.; Louie, S. G.; Zettl, A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 89, No. 12, 121407, 14.03.2014.

Research output: Contribution to journalArticle

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AU - Alem, Nasim

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AU - Linck, M.

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