Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

J. H. Chen, G. Autès, N. Alem, F. Gargiulo, A. Gautam, M. Linck, C. Kisielowski, O. V. Yazyev, S. G. Louie, A. Zettl

Research output: Contribution to journalArticlepeer-review

78 Scopus citations

Abstract

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.

Original languageEnglish (US)
Article number121407
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume89
Issue number12
DOIs
StatePublished - Mar 14 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering'. Together they form a unique fingerprint.

Cite this