Controlling band gap energies in cluster-assembled ionic solids through internal electric fields

Nirmalya K. Chaki, Sukhendu Mandal, Arthur C. Reber, Meichun Qian, Hector M. Saavedra, Paul S. Weiss, Shiv N. Khanna, Ayusman Sen

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Abstract

Assembling ionic solids where clusters are arranged in different architectures is a promising strategy for developing band gap-engineered nanomaterials. We synthesized a series of cluster-assembled ionic solids composed of [As7-Au2-As7]4- in zero-, one-, and two-dimensional architectures. Higher connectivity is expected to decrease the band gap energy through band broadening. However, optical measurements indicate that the band gap energy increases from 1.69 to 1.98 eV when moving from zero- to two-dimensional assemblies. This increase is a result of the local electric fields generated by the adjacent counterions, which preferentially stabilize the occupied cluster electronic states.

Original languageEnglish (US)
Pages (from-to)5813-5818
Number of pages6
JournalACS nano
Volume4
Issue number10
DOIs
StatePublished - Oct 26 2010

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chaki, N. K., Mandal, S., Reber, A. C., Qian, M., Saavedra, H. M., Weiss, P. S., Khanna, S. N., & Sen, A. (2010). Controlling band gap energies in cluster-assembled ionic solids through internal electric fields. ACS nano, 4(10), 5813-5818. https://doi.org/10.1021/nn101640r