Controlling crystallization to improve charge mobilities in transistors based on 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene

Jwala M. Adhikari, Kiarash Vakhshouri, Brandon D. Calitree, Alexander Hexemer, Michael Anthony Hickner, Enrique Daniel Gomez

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Long-range order at multiple length scales in small molecule semiconductors is critical to achieve effective electrical charge transport. As a consequence, processing strategies are often important for the fabrication of high-performance devices, such as thin-film transistors. We demonstrate that melting followed by quenching at a fixed temperature can obviate prior processing, control the crystallization process, and lead to enhanced charge mobilities in thin-film transistors based on 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene active layers. Melting followed by quenching to 80 °C yields films with higher degrees of orientational order, and therefore charge mobilities in devices that are higher by a factor of five over films annealed at the same temperature directly after film casting.

Original languageEnglish (US)
Pages (from-to)8799-8803
Number of pages5
JournalJournal of Materials Chemistry C
Volume3
Issue number34
DOIs
StatePublished - Jul 31 2015

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Crystallization
Transistors
Thin film transistors
Quenching
Melting
Processing
Charge transfer
Casting
Semiconductor materials
Fabrication
Temperature
Molecules
2,7-dioctyl(1)benzothieno(3,2-b)(1)benzothiophene

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

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Controlling crystallization to improve charge mobilities in transistors based on 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene. / Adhikari, Jwala M.; Vakhshouri, Kiarash; Calitree, Brandon D.; Hexemer, Alexander; Hickner, Michael Anthony; Gomez, Enrique Daniel.

In: Journal of Materials Chemistry C, Vol. 3, No. 34, 31.07.2015, p. 8799-8803.

Research output: Contribution to journalArticle

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AU - Adhikari, Jwala M.

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AU - Hexemer, Alexander

AU - Hickner, Michael Anthony

AU - Gomez, Enrique Daniel

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AB - Long-range order at multiple length scales in small molecule semiconductors is critical to achieve effective electrical charge transport. As a consequence, processing strategies are often important for the fabrication of high-performance devices, such as thin-film transistors. We demonstrate that melting followed by quenching at a fixed temperature can obviate prior processing, control the crystallization process, and lead to enhanced charge mobilities in thin-film transistors based on 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene active layers. Melting followed by quenching to 80 °C yields films with higher degrees of orientational order, and therefore charge mobilities in devices that are higher by a factor of five over films annealed at the same temperature directly after film casting.

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