Cooling effects of field emission from semiconductors at high temperatures

Moon S. Chung, Alexander Mayer, Brock Landon Weiss, Nicholas M. Miskovsky, Paul H. Cutler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the cooling effect of field emission from semiconductors at temperatures up to 900K. It is found that at high temperatures, field emission cooling is meaningful for cathodes of material with low resistivity such as PbTe. For n-type semiconductors with low resistivity, the Nottingham energy exchange in field emission can be comparable to or greater than the Peltier coefficient.

Original languageEnglish (US)
Title of host publicationProceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference
Pages5-6
Number of pages2
StatePublished - 2011
Event2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal, Germany
Duration: Jul 18 2011Jul 22 2011

Other

Other2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011
CountryGermany
CityWuppertal
Period7/18/117/22/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Chung, M. S., Mayer, A., Weiss, B. L., Miskovsky, N. M., & Cutler, P. H. (2011). Cooling effects of field emission from semiconductors at high temperatures. In Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference (pp. 5-6). [6004534]