Cooling effects of field emission from thermoelectric materials

M. S. Chung, K. P. Geum, A. Mayer, Brock Landon Weiss, N. M. Miskovsky, P. H. Cutler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is known that the energy exchange takes place between the cathode and the external circuit in field emission. The resultant, so-called Nottingham effect, for a metallic cathode contributes to heating at low temperatures and to cooling at high temperatures with reference of 1000K. This stabilizing two-way effect changes to be one-way for semiconductor cathodes. Recently we have theoretically found that field emission from the n-type semiconductor yields the cooling in the cathode at all temperatures. Even though the Joule heating is taken into account, the net cooling is made in the considerable range of current [1]. The energy exchange obtained for field emission from n-type Si and GaN is found to be a few fractions of eV.

Original languageEnglish (US)
Title of host publicationProceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010
Pages295-296
Number of pages2
DOIs
StatePublished - 2010
Event8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010 - Nanjing, China
Duration: Oct 14 2010Oct 16 2010

Other

Other8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010
CountryChina
CityNanjing
Period10/14/1010/16/10

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chung, M. S., Geum, K. P., Mayer, A., Weiss, B. L., Miskovsky, N. M., & Cutler, P. H. (2010). Cooling effects of field emission from thermoelectric materials. In Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010 (pp. 295-296). [5644206] https://doi.org/10.1109/IVESC.2010.5644206