Abstract
It is known that the energy exchange takes place between the cathode and the external circuit in field emission. The resultant, so-called Nottingham effect, for a metallic cathode contributes to heating at low temperatures and to cooling at high temperatures with reference of 1000K. This stabilizing two-way effect changes to be one-way for semiconductor cathodes. Recently we have theoretically found that field emission from the n-type semiconductor yields the cooling in the cathode at all temperatures. Even though the Joule heating is taken into account, the net cooling is made in the considerable range of current [1]. The energy exchange obtained for field emission from n-type Si and GaN is found to be a few fractions of eV.
Original language | English (US) |
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Title of host publication | Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010 |
Pages | 295-296 |
Number of pages | 2 |
DOIs | |
State | Published - 2010 |
Event | 8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010 - Nanjing, China Duration: Oct 14 2010 → Oct 16 2010 |
Other
Other | 8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010 |
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Country/Territory | China |
City | Nanjing |
Period | 10/14/10 → 10/16/10 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering