Cooling effects of field emission from thermoelectric materials

M. S. Chung; K. P. Geum; A. Mayer; Brock Landon Weiss; N. M. Miskovsky; P. H. Cutler

doi:10.1109/IVESC.2010.5644206

Cooling effects of field emission from thermoelectric materials

M. S. Chung, K. P. Geum, A. Mayer, Brock Landon Weiss, N. M. Miskovsky, P. H. Cutler

Division of Mathematics & Natural Sciences (Altoona)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

It is known that the energy exchange takes place between the cathode and the external circuit in field emission. The resultant, so-called Nottingham effect, for a metallic cathode contributes to heating at low temperatures and to cooling at high temperatures with reference of 1000K. This stabilizing two-way effect changes to be one-way for semiconductor cathodes. Recently we have theoretically found that field emission from the n-type semiconductor yields the cooling in the cathode at all temperatures. Even though the Joule heating is taken into account, the net cooling is made in the considerable range of current [1]. The energy exchange obtained for field emission from n-type Si and GaN is found to be a few fractions of eV.

Original language	English (US)
Title of host publication	Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010
Pages	295-296
Number of pages	2
DOIs	https://doi.org/10.1109/IVESC.2010.5644206
State	Published - 2010
Event	8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010 - Nanjing, China Duration: Oct 14 2010 → Oct 16 2010

Other

Other	8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010
Country/Territory	China
City	Nanjing
Period	10/14/10 → 10/16/10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/IVESC.2010.5644206

Cite this

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title = "Cooling effects of field emission from thermoelectric materials",

abstract = "It is known that the energy exchange takes place between the cathode and the external circuit in field emission. The resultant, so-called Nottingham effect, for a metallic cathode contributes to heating at low temperatures and to cooling at high temperatures with reference of 1000K. This stabilizing two-way effect changes to be one-way for semiconductor cathodes. Recently we have theoretically found that field emission from the n-type semiconductor yields the cooling in the cathode at all temperatures. Even though the Joule heating is taken into account, the net cooling is made in the considerable range of current [1]. The energy exchange obtained for field emission from n-type Si and GaN is found to be a few fractions of eV.",

author = "Chung, {M. S.} and Geum, {K. P.} and A. Mayer and Weiss, {Brock Landon} and Miskovsky, {N. M.} and Cutler, {P. H.}",

year = "2010",

doi = "10.1109/IVESC.2010.5644206",

language = "English (US)",

isbn = "9781424466429",

pages = "295--296",

booktitle = "Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010",

note = "8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010 ; Conference date: 14-10-2010 Through 16-10-2010",

}

Chung, MS, Geum, KP, Mayer, A, Weiss, BL, Miskovsky, NM & Cutler, PH 2010, Cooling effects of field emission from thermoelectric materials. in Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010., 5644206, pp. 295-296, 8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010, Nanjing, China, 10/14/10. https://doi.org/10.1109/IVESC.2010.5644206

Cooling effects of field emission from thermoelectric materials. / Chung, M. S.; Geum, K. P.; Mayer, A.; Weiss, Brock Landon; Miskovsky, N. M.; Cutler, P. H.

Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010. 2010. p. 295-296 5644206.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Cooling effects of field emission from thermoelectric materials

AU - Chung, M. S.

AU - Geum, K. P.

AU - Mayer, A.

AU - Weiss, Brock Landon

AU - Miskovsky, N. M.

AU - Cutler, P. H.

PY - 2010

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N2 - It is known that the energy exchange takes place between the cathode and the external circuit in field emission. The resultant, so-called Nottingham effect, for a metallic cathode contributes to heating at low temperatures and to cooling at high temperatures with reference of 1000K. This stabilizing two-way effect changes to be one-way for semiconductor cathodes. Recently we have theoretically found that field emission from the n-type semiconductor yields the cooling in the cathode at all temperatures. Even though the Joule heating is taken into account, the net cooling is made in the considerable range of current [1]. The energy exchange obtained for field emission from n-type Si and GaN is found to be a few fractions of eV.

AB - It is known that the energy exchange takes place between the cathode and the external circuit in field emission. The resultant, so-called Nottingham effect, for a metallic cathode contributes to heating at low temperatures and to cooling at high temperatures with reference of 1000K. This stabilizing two-way effect changes to be one-way for semiconductor cathodes. Recently we have theoretically found that field emission from the n-type semiconductor yields the cooling in the cathode at all temperatures. Even though the Joule heating is taken into account, the net cooling is made in the considerable range of current [1]. The energy exchange obtained for field emission from n-type Si and GaN is found to be a few fractions of eV.

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BT - Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010

T2 - 8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010

Y2 - 14 October 2010 through 16 October 2010

ER -

Cooling effects of field emission from thermoelectric materials

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