Abstract
It is known that the energy exchange takes place between the cathode and the external circuit in field emission. The resultant, so-called Nottingham effect, for a metallic cathode contributes to heating at low temperatures and to cooling at high temperatures with reference of 1000K. This stabilizing two-way effect changes to be one-way for semiconductor cathodes. Recently we have theoretically found that field emission from the n-type semiconductor yields the cooling in the cathode at all temperatures. Even though the Joule heating is taken into account, the net cooling is made in the considerable range of current [1]. The energy exchange obtained for field emission from n-type Si and GaN is found to be a few fractions of eV.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010 |
| Pages | 295-296 |
| Number of pages | 2 |
| DOIs | |
| State | Published - 2010 |
| Event | 8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010 - Nanjing, China Duration: Oct 14 2010 → Oct 16 2010 |
Other
| Other | 8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010 |
|---|---|
| Country | China |
| City | Nanjing |
| Period | 10/14/10 → 10/16/10 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
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Cooling effects of field emission from thermoelectric materials. / Chung, M. S.; Geum, K. P.; Mayer, A.; Weiss, Brock Landon; Miskovsky, N. M.; Cutler, P. H.
Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010. 2010. p. 295-296 5644206.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Cooling effects of field emission from thermoelectric materials
AU - Chung, M. S.
AU - Geum, K. P.
AU - Mayer, A.
AU - Weiss, Brock Landon
AU - Miskovsky, N. M.
AU - Cutler, P. H.
PY - 2010
Y1 - 2010
N2 - It is known that the energy exchange takes place between the cathode and the external circuit in field emission. The resultant, so-called Nottingham effect, for a metallic cathode contributes to heating at low temperatures and to cooling at high temperatures with reference of 1000K. This stabilizing two-way effect changes to be one-way for semiconductor cathodes. Recently we have theoretically found that field emission from the n-type semiconductor yields the cooling in the cathode at all temperatures. Even though the Joule heating is taken into account, the net cooling is made in the considerable range of current [1]. The energy exchange obtained for field emission from n-type Si and GaN is found to be a few fractions of eV.
AB - It is known that the energy exchange takes place between the cathode and the external circuit in field emission. The resultant, so-called Nottingham effect, for a metallic cathode contributes to heating at low temperatures and to cooling at high temperatures with reference of 1000K. This stabilizing two-way effect changes to be one-way for semiconductor cathodes. Recently we have theoretically found that field emission from the n-type semiconductor yields the cooling in the cathode at all temperatures. Even though the Joule heating is taken into account, the net cooling is made in the considerable range of current [1]. The energy exchange obtained for field emission from n-type Si and GaN is found to be a few fractions of eV.
UR - http://www.scopus.com/inward/record.url?scp=78650636093&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650636093&partnerID=8YFLogxK
U2 - 10.1109/IVESC.2010.5644206
DO - 10.1109/IVESC.2010.5644206
M3 - Conference contribution
AN - SCOPUS:78650636093
SN - 9781424466429
SP - 295
EP - 296
BT - Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010
ER -