Copolymer fraction effect on acid catalyzed deprotection reaction kinetics in model 193 nm photoresists

Shuhui Kang, Vivek M. Prabhu, Bryan Vogt, Eric K. Lin, Wen Li Wu, Karen Turnquest

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

A correlation between polymer molecular structure and acid catalyzed reaction kinetics is demonstrated by a photoresist copolymer with an acid-labile and a non-reactive monomer. The acid catalyzed deprotection kinetics depend significantly on the composition of the non-reactive comonomer in the polymer chain. The apparent reaction rate constant decreases monotonically with increasing non-reactive comonomer composition. The phenomena are interpreted as the reduction of diffusivity of photoacid in the polymer matrix from a hydrogen-bonding interaction with the polar group in the inert comonomer. In addition, hydrogen-bonding interactions between the photoacid and the reaction product, primarily methacrylic acid, can account for the acid loss or trapping effect observed by various researchers.

Original languageEnglish (US)
Title of host publicationAdvances in Resist Technology and Processing XXIII
DOIs
StatePublished - Jul 10 2006
EventAdvances in Resist Technology and Processing XXIII - San JOse, CA, United States
Duration: Feb 20 2006Feb 22 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6153 II
ISSN (Print)0277-786X

Conference

ConferenceAdvances in Resist Technology and Processing XXIII
CountryUnited States
CitySan JOse, CA
Period2/20/062/22/06

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Kang, S., Prabhu, V. M., Vogt, B., Lin, E. K., Wu, W. L., & Turnquest, K. (2006). Copolymer fraction effect on acid catalyzed deprotection reaction kinetics in model 193 nm photoresists. In Advances in Resist Technology and Processing XXIII [61533N] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6153 II). https://doi.org/10.1117/12.656594