Core-shell type of tunneling nanowire FETs for large driving current with unipolarity

Shengxi Huang, Zhe Wang, Ze Yuan, Jinyu Zhang, Zhiping Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A radial-heterojunction (HJ), as opposed to axial-HJ, tunneling-FET (tFET) is proposed to increase the driving current as much as 4 times while maintaining steep subthreshold swing (SS) and non-ambipolarity (i.e., unipolar transfer characteristics). The core/shell nanowire is adopted for the bulk of the device, with source region in the core of the wire and shell for the channel. The tunneling thus occurs in the radial direction, increasing the junction area substantially and leading to large on current. The core-shell junction is made of Ge-Si, and a lightly-doped drain-extension is used to suppress ambipolarity, which impedes the application of many types of tunneling devices in digital circuits. Comparison with unipolar axial-HJ GAA NW-tFET is made to show the advantage of the radial structure.

Original languageEnglish (US)
Title of host publication2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 - Tianjin, China
Duration: Nov 17 2011Nov 18 2011

Publication series

Name2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Other

Other2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
CountryChina
CityTianjin
Period11/17/1111/18/11

Fingerprint

Field effect transistors
Nanowires
Heterojunctions
Cable cores
Digital circuits
Wire

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Huang, S., Wang, Z., Yuan, Z., Zhang, J., & Yu, Z. (2011). Core-shell type of tunneling nanowire FETs for large driving current with unipolarity. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 [6117670] (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011). https://doi.org/10.1109/EDSSC.2011.6117670
Huang, Shengxi ; Wang, Zhe ; Yuan, Ze ; Zhang, Jinyu ; Yu, Zhiping. / Core-shell type of tunneling nanowire FETs for large driving current with unipolarity. 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011).
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abstract = "A radial-heterojunction (HJ), as opposed to axial-HJ, tunneling-FET (tFET) is proposed to increase the driving current as much as 4 times while maintaining steep subthreshold swing (SS) and non-ambipolarity (i.e., unipolar transfer characteristics). The core/shell nanowire is adopted for the bulk of the device, with source region in the core of the wire and shell for the channel. The tunneling thus occurs in the radial direction, increasing the junction area substantially and leading to large on current. The core-shell junction is made of Ge-Si, and a lightly-doped drain-extension is used to suppress ambipolarity, which impedes the application of many types of tunneling devices in digital circuits. Comparison with unipolar axial-HJ GAA NW-tFET is made to show the advantage of the radial structure.",
author = "Shengxi Huang and Zhe Wang and Ze Yuan and Jinyu Zhang and Zhiping Yu",
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Huang, S, Wang, Z, Yuan, Z, Zhang, J & Yu, Z 2011, Core-shell type of tunneling nanowire FETs for large driving current with unipolarity. in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011., 6117670, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, Tianjin, China, 11/17/11. https://doi.org/10.1109/EDSSC.2011.6117670

Core-shell type of tunneling nanowire FETs for large driving current with unipolarity. / Huang, Shengxi; Wang, Zhe; Yuan, Ze; Zhang, Jinyu; Yu, Zhiping.

2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117670 (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Huang S, Wang Z, Yuan Z, Zhang J, Yu Z. Core-shell type of tunneling nanowire FETs for large driving current with unipolarity. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117670. (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011). https://doi.org/10.1109/EDSSC.2011.6117670