Correlated effects of self-heating, light output, and efficiency of GaN light-emitting diodes on junction temperature

Bikramjit Chatterjee, James Spencer Lundh, Daniel Shoemaker, Tae Kyoung Kim, Joon Seop Kwak, Jaehee Cho, Sukwon Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With the advent of GaN as the major material system in the solid-state lighting industry—high power, high brightness LEDs with wavelength ranging from near UV to white are getting fabricated and part of a tremendously large and ever-increasing market. However, device self-heating and environment temperature significantly deteriorates the LED’s optical performance. Hence, it is extremely important to quantify the device self-heating and its impact on optical performance. In this work, three different characterization techniques were used to calculate temperature rise due to self-heating for an InGaN/GaN LED with 5 pairs of multiple quantum wells. The impact of self-heating and increased environment temperature on the device optical performance were also studied. Nanoparticle assisted Raman thermometry was used for the first time to measure the LED mesa surface temperature. The temperature measured using this technique was compared with temperature data obtained by using the forward voltage method and infrared (IR) thermography. The IR and Raman measurement results were in close agreement while the temperature data obtained from forward voltage method underestimated the temperature by 5-10%. It was also observed that due to environment temperature increase from 25ºC to 100ºC, LED optical power output drops by 12%.

Original languageEnglish (US)
Title of host publicationASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019
PublisherAmerican Society of Mechanical Engineers (ASME)
ISBN (Electronic)9780791859322
DOIs
StatePublished - Jan 1 2019
EventASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019 - Anaheim, United States
Duration: Oct 7 2019Oct 9 2019

Publication series

NameASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019

Conference

ConferenceASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019
CountryUnited States
CityAnaheim
Period10/7/1910/9/19

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Correlated effects of self-heating, light output, and efficiency of GaN light-emitting diodes on junction temperature'. Together they form a unique fingerprint.

  • Cite this

    Chatterjee, B., Lundh, J. S., Shoemaker, D., Kim, T. K., Kwak, J. S., Cho, J., & Choi, S. (2019). Correlated effects of self-heating, light output, and efficiency of GaN light-emitting diodes on junction temperature. In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019 (ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2019). American Society of Mechanical Engineers (ASME). https://doi.org/10.1115/IPACK2019-6426